Amorphous Germanium
Mostrando 1-8 de 8 artigos, teses e dissertações.
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1. Cristalização do germanio amorfo pelo aluminio : caracterização por espectroscopia Raman / Aluminium induced crystallization of the amorphous germanium : characterization for Raman spectroscopy
This research work studies the microscopic mechanisms leading to the low-temperature crystallization of amorphous germanium (a-Ge) films induced by aluminum. The crystallization process was studied in Al-doped samples and also in multi-layer structures possessing an Al layer sandwiched between the substrate and the a-Ge film. In the case of Al-doped samples,
Publicado em: 2007
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2. Bismuth doping of hydrogenated amorphous germanium
t: The addition of small quantities of bismuth to hydrogenated amorphous germanium (a-Ge:H), changed its electrical conductivity and bandgap. Detailed data were obtained from measurements of electrical conductivity, optical and infrared transrnission, and from photothermal deflection spectroscopy. Films of a-Ge:H having Bi atomic concentrations ranging betwe
Publicado em: 1998
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3. Cristalização uniforme e seletiva de materiais semicondutores amorfos utilizando pulsos curtos de uma fonte de luz laser
We have investigated the laser induced crystallization of amorphous semiconductors using short-pulses (5-7 ns wide) from the second harmonic (l = 532 nm) of a Nd:Yag laser source. The main studied material was the amorphous germanium (a-Ge), while some alloys like its hydrogenated counterpart (a-Ge:H), silicon-germanium (a-SiGe) and germanium nitride (a-GeN)
Publicado em: 1998
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4. Dopagem tipo-n e mudanças estruturais induzidas pelo nitrogenio de filmes de germanio amorfo hidrogenado
In this work several informations are presented and discussed about structura1 and optoelectronic properties of doped samples of hydrogenated amorphous germanium (a-Ge:H) using P, As (solid sources) and N (using NH3) as doping impurities. In addition, we studied structura1 changes of a-Ge:H induced by N, in the nitrogen concentration range of ~2-6 at. %. The
Publicado em: 1998
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5. Fotocondutividade em a-Ge:H dopado com elementos da coluna III da Tabela Periodica
This work reports on the effects of gallium and indium p-type doping on the photoconductivity of hydrogenated amorphous germanium ( a-Ge:H ) thin films deposited by the rf-sputtering method. The quantum efficiency-mobility-lifetime ( hmt ) product has been measured at room temperature as a function of the dark Fermi energy EF on samples with relative dopant
Publicado em: 1997
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6. Nitrogenio em semicondutores amorfos
This work presents experimental data referring to the effects resulting from the introduction of nitrogen into amorphous silicon and germanium. AlI the samples studied in this work were deposited as thin films using the rf reactive sputtering technique in highly controlled Ar+(H2)+N2 gaseous atmospheres. It is shown that either the nitrogen presence and its
Publicado em: 1995
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7. Estudo das propriedades estruturais e optoeletronicas de filmes finos de germanio amorfo hidrogenado
In this work experimental data related to micro void structure and hydrogenation of hydrogenated amorphous germanium (a-Ge:H) thin films are presented. The samples were grown by rf reactive sputtering (13.56MHz) and were studied as grown. The main characterization techniques were infrared spectroscopy and small angle X-ray scattering (SAXS). This work is not
Publicado em: 1994
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8. Nitrogenio como um dopante em filmes de a-Ge: H
This work presents experimental data referring to the electrical and optical properties of nitrogen-doped hydrogenated and un-hydrogenated amorphous germanium (a-Ge) films of improved quality. It is shown that the inclusion of minute amounts of nitrogen atoms in the a-Ge network produces important changes in the opto-electronic properties in the material. Th
Publicado em: 1991