AC hot carrier transport in 3C- and 6H-SiC in the terahertz frequency and high lattice temperature regime
AUTOR(ES)
Bezerra, E. F., Caetano, E. W. S., Freire, V. N., Costa, J. A. P. da, Silva Jr., E. F. da
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2002-06
RESUMO
The complex mobility of electrons in 3C - and 6H-SiC subjected to intense high frequency electric fields is calculated taking into account effects of band nonparabolicity. The electric field, given by a dc component plus an ac component in the frequency range 0.1-100 THz, is applied along the [0001] ([111]) direction in the hexagonal (cubic) polytype. The real electron mobility presents a characteristic maximum peaking around 6-8 THz, while the imaginary electron mobility is structured, with characteristic minimum and maximum around 2-3 THz and 20{30 THz, respectively. These mobilities are seen to smooth down for higher temperatures in both polytypes.
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