Anisotropia optica em poços quanticos de InGaAs crescidos por MBE sobre substratos de GasAs com orientação [113]

AUTOR(ES)
DATA DE PUBLICAÇÃO

1997

RESUMO

Growth of Quantum Wells on substrates with non-symmetric orientations [11N], N ¹ 1, is sometimes used in the fabrication of quantum wires. The anisotropy in the optical properties (Reflectivity, absorption, photoluminescence, etc) for light polarized along or perpendicular to the quantum wire has been proposed as a quantitative indicator of the degree of lateral confinement in these structures. Here we study the modulated reflectivity of non-corrugated In0.2Ga0.8As quantum wells grown by MBE on [113] GaAs substrates. Strong anisotropy?s are found, in spite of the absence of corrugation or quantum wire formation in our samples. The degree of this anisotropy is strongly dependent on the width of the 2D quantum wells. Analyzing our results in the light of previously existing theoretical studies we conclude that the formation of quantum wires is not necessary for the appearance of these optical anisotropy?s and, consequently, that this anisotropy cannot be used as an indicator of lateral confinement, unless the growth axis is chosen along a symmetry direction such as [001] or [111]

ASSUNTO(S)

poços quanticos heteroestruturas anisotropia

ACESSO AO ARTIGO

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