Correlated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: effects of applied electric and in-plane magnetic fields

AUTOR(ES)

Duque, C. A., Oliveira, L. E., Dios-Leyva, M. de

FONTE

Brazilian Journal of Physics

DATA DE PUBLICAÇÃO

2006-09

RESUMO

The effects of crossed electric and magnetic fields on the electronic and exciton properties in semiconductor heterostructures have been investigated within the effective-mass and parabolic band approximations for both bulk GaAs and GaAs-Ga1-xAl xAs quantum wells. The combined effects on the heterostructure properties of the applied crossed electric/magnetic fields together with the direct coupling between the exciton center of mass and internal exciton motions may be dealt with via a simple parameter representing the distance between the electron and hole magnetic parabolas. Calculations lead to the expected behavior for the exciton dispersion in a wide range of the crossed electric/magnetic fields, and present theoretical results are found in good agreement with available experimental measurements.

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