Diagrama Renninger com radiação de freamento de eletrons e sincrotron no estudo de estruturas heteroepitaxiais

AUTOR(ES)
DATA DE PUBLICAÇÃO

1994

RESUMO

In this work, Renninger scans obtained with Bremsstrahlung and synchrotron radiation were used to study semiconductor heteroepitaxial structures. The program MULTX was implemented to provide Renninger scan simulations and it is based on the iterative method to calculate X-ray multiple diffraction intensities. The polarization factor for the synchrotron radiation and also the diffracted beam path length were considered into the MULTX program. In order to characterize the sample to be analyzed and perform Bremsstrahlung Renninger scans automatized experimental setups with high resolution were developed. The study of these Renninger scans has shown symmetry loss in the multiple diffraction intensities for the [111] direction in cubic crystals, which were simulated by MULTX. It has also shown that the intensities are sensitive to the AI composition in GaAlAs samples, being the 4-beam Bragg-Laue case (000 002 113 111) the most sensitive for thick samples (t >3mm) whereas the 3- beam surface case (000 002 111) is the best choice for thin samples (t <3mm). Hybrid reflection which were observed by the first time in GaAs/Si Renninger scans have shown the feasibility of its use in the characterization of heteroepitaxial structures. As an application the InGaAsP/GaAs system was characterized. Regarding the study of synchrotron radiation Renninger scan the experimental InP 006 scan was taken as a standard to check the polarization factor and the diffracted beam pad1Iength. InGaAs/AlGaInAs/InP samples were analyzed and experimental Renninger scans were simulated with the MULTX program. The split of the 6-beam at X = 90° due to the layer tetragonal distortion, among other effects, was simulated

ASSUNTO(S)

semicondutores - efeito da radiação raios - difração radiação sincrotronica

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