Dielectric properties of thin film Al/Sb2Pb1Se7/Al devices
AUTOR(ES)
Wagle, Shaila, Shirodkar, Vinay
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2000
RESUMO
Metal - glass metal, MGM, thin film devices are prepared using vacuum deposition of Sb2Pb1Se7 compound. The capacitance and the loss tangent variation as a function of temperature and frequency is studied. The observed characteristics are explained using small signal ac circuit analysis. It is shown that the theoretical curve generated using the ac circuit analysis gives excellent fitting with the experimental curve.
Documentos Relacionados
- Space-charge-limited conduction in thin film Al/Sb2Pb1Se7/Al devices
- Caracterização de ligas binárias nanoestruturadas dos sistemas Zn-Sb, Ge-Sb, Al-Sb e Co-Sb produzidas por síntese mecânica
- Optical and Structural Properties of Natural MnSeO4 Mineral Thin Film
- Thin-film ZnO/CdS/CuIn1-xGa xSe2 solar cells: anomalous physical properties of the CuIn1-xGa xSe2 absorber
- Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator