Dimensional crossover and weak localization in a 90 nm n-GaAs thin film

AUTOR(ES)

Gilbertson, A. M.

FONTE

American Institute of Physics

RESUMO

We report on the magnetotransport in a 90 nm thick n-type GaAs epitaxial thin film in the weak localization (WL) regime. Low temperature (T≤50 K) magnetotransport data are fit with WL theory, from which the phase coherence time, τϕ∝T−p (p=1.22±0.01), are extracted. We conclude that the dominant dephasing mechanism at these temperatures is electron-electron (e-e) scattering in the Nyquist limit. Evidence of a crossover from two-dimensional to three-dimensional behavior with respect to both coherent transport (WL) and e-e interactions is observed in the temperature dependence of the zero-field conductivity and τϕ, respectively.

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