Donor-related optical absorption spectra for a GaAs-Ga0.7Al0.3As double quantum well under hydrostatic pressure and applied electric field effects
AUTOR(ES)
Morales, A. L., Raigoza, N., Duque, C. A.
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2006-09
RESUMO
The hydrostatic-pressure and applied electric field dependencies of the binding energy and the optical-absorption spectra, associated with transitions between the n = 1 valence subband and the donor-impurity band, in symmetrical and asymmetrical GaAs-Ga1-xAl xAs double quantum-well structures are calculated using a variational procedure within the effective-mass approximation. Results are obtained for different well and barrier widths, shallow-donor impurity positions, hydrostatic pressure, and applied electric field.
Documentos Relacionados
- Hydrostatic pressure and electric-field effects on the shallow donor impurity states in GaAs-Ga0.7Al0.3As quantum-well wires
- Infinite potential barrier and hydrostatic pressure effects on impurity-related optical absorption spectra in GaAs double quantum wells
- Propriedades opticas de excitons e aceitadores de Be confinados em multiplos poços quanticos de GaAs/Ga0.7Al0.3As
- Binding energy and photoionization cross-section in GaAs quantum well-wires and quantum dots: magnetic field and hydrostatic pressure effects
- Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure