Electron g-factor and cyclotron effective mass in semiconductor quantum wells under growth-direction applied magnetic fields
AUTOR(ES)
Dios-Leyva, M. de, Porras-Montenegro, N., Brandi, H. S., Oliveira, L. E.
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2006-09
RESUMO
The Ogg-McCombe effective Hamiltonian for the electron in the conduction band together with the non-parabolic and effective-mass approximations were used in a theoretical study of the cyclotron effective mass and electron effective Landé g||-factor in semiconductor GaAs-Ga1-xAl xAs quantum wells under an applied magnetic field parallel to the growth direction of the quantum well. Calculations are performed as a function of the applied magnetic field, and for different widths of the GaAs-Ga1-xAl xAs quantum wells. Results for the electron cyclotron effective mass and g||-factor are found in quite good agreement with experimental data.
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