Electron-phonon scattering in graded quantum dots

AUTOR(ES)

Diniz, G. S., Qu, Fanyao, Diniz Neto, O. O., Alcalde, A. M.

FONTE

Brazilian Journal of Physics

DATA DE PUBLICAÇÃO

2006-06

RESUMO

Theoretical calculations of electron-phonon scattering rates in GaAs/Al xGa1 - xAs spherical quantum dots have been performed by means of effective mass approximation in the frame of finite element method. The influence of a roughness interface and external magnetic fields are analysed for different scattering rate transition. Our results open interesting channels for electron dephasing times manipulation.

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