Estudo do processo de eliminação de "etch-channels" por eletrodifusão em quartzo sintetico

AUTOR(ES)
DATA DE PUBLICAÇÃO

1998

RESUMO

The sweeping in synthetic quartz is a process of impurity diffusion performed at temperatures of about 500°C with the application of an intense electrical field. The electrodiffusion in synthetic quartz (sweeping), by using for example AG atoms in air, has an increasing technological interest as it makes the material highly resistant to the formation of etch-channels by chemical etching. The etch-channel free quartz is essential for advanced technology applications, such as, the very high frequency resonators and filters, which are processed by microlithography and etching techniques. In this work, we have developed a research work on studying the sweeping conditions (temperature, electric field magnitude and sweeping time) and their influence on the elimination of etch-channels in Z-bar synthetic quartz grown by Brazilian ABC Crystals. The characterization studies have been conducted by etching technique, optical inspectoscopy and microscopy. The result shows a sharp decrease of etch-channels density from 11 to 0 lines/cm2 for the electric field varying in the interval 125 - 1000 V/cm. A dependence ofthe electrodifusion current density and curve shape were observed with the applied electrical field caused by the AG diffusion and alkaline ions diffusion like LI , NA and K. It was observed two phenomena on the electrodifusion current: one of them was a fast rising current density of the order of 10 times higher than usual that was observed to appear with the formation of microcracks inside the quartz block. Crystal, even under de application of low electrical fields. The other phenomena of high current density was observed to be associated with the applied high electrical field (~ 1000 V/cm), which may allow high mobility of AG ions

ASSUNTO(S)

quartzo ions metalicos eletrolise

ACESSO AO ARTIGO

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