Estudos de hetero-estruturas de camadas tensionadas de InGaAs/GaAs
AUTOR(ES)
Fernando Iikawa
DATA DE PUBLICAÇÃO
1988
RESUMO
We present a detailed study of InxGa1-xAs/GaAs strained-layer single quantum well and superlattices. The strain in each type of layer in the superlattices was determined from the Raman measurements. We determined the energy difference between the confined states of electrons in the conduction band and the strain-split heavy and light holes in the valence band from photoluminescence and transmission spectra. From this difference we obtain 0.5 estrutura de camadas (solidos) espalhamento (fisica)
ASSUNTO(S)
ACESSO AO ARTIGO
http://libdigi.unicamp.br/document/?code=vtls000056186
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