Influence of Yttrium Dopant on the Structure and Electrical Conductivity of Potassium Sodium Niobate Thin Films
AUTOR(ES)
Hatta, Maziati Akmal Mohd, Rashid, Mohd Warikh Abd, Azlan, Umar Al-Amani Haji, Azmi, Nurul Azuwa, Azam, Mohd Asyadi, Moriga, Toshihiro
FONTE
Mat. Res.
DATA DE PUBLICAÇÃO
24/10/2016
RESUMO
KNN thin films with diverse yttrium concentration (mol % = 0, 0.1, 0.3, 0.5, 0.7 and 0.9) were fabricated using sol-gel spin coating technique. Doped KNN revealed that Y3+ was successfully doped into the ABO3 perovskite lattice without changing the phase formation of KNN. The thickness of the deposited layer of KNN produced with increasing dopant concentration was determined to be 200 nm with dense and well-defined grains. Afterwards, the vibrational bonding and conductivity of KNN films with diverse yttrium concentration were identified according to the charge compensation mechanism. At high dopant concentration of > 0.5 mol %, O-Nb-O bonding was asymmetric and became distorted due to B-site occupancy by yttrium dopant. Further investigation revealed that charge compensation mechanism was shifted by increasing doping concentration. As a result, yttrium-doped KNN became semi-conductive at low yttrium concentration. Meanwhile, at high concentration, yttrium-doped KNN became an insulator and underwent ionic compensation.
Documentos Relacionados
- Influence of pH of colloidal suspension on the electrical conductivity of SnO2 thin films deposited via Sol-Gel-Dip-Coating
- Influence of the crystallization thermal treatment on the structural and electrical properties of PZT thin films
- Ga Dopant Induced Band Gap Broadening and Conductivity Enhancement in Spray Pyrolysed Zn0.85Ca0.15O thin Films
- Water at interfaces and its influence on the electrical properties of adsorbed films
- Investigation of the Structural, Optical and Electrical Properties of Copper Selenide Thin Films
