Interfacial layers and impurity segregation in InP/In0.53Ga0.47As superlattices

AUTOR(ES)

Hanamoto, L. K., Henriques, A. B., Tribuzy, C. V.-B., Souza, P. L., Yavich, B., Abramof, E.

FONTE

Brazilian Journal of Physics

DATA DE PUBLICAÇÃO

2002-06

RESUMO

The interfaces in InP=In0.53 Ga0.47As superlattices modulation doped with Si were investigated using magneto-transport, capacitance-voltage, and high resolution X-ray diffraction measurements. Results indicate that a thick interfacial layer is formed when InP is grown on top of In xGa1-xAs, and that Si atoms that fall in the interfacial layer have a high probability of not forming a shallow donor center. Using a simple theoretical model the width of the interfacial layer which was estimated to be 7±1 monolayers.

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