Lasers semicondutores em cavidade estendida aplicados a espectroscopia de alta resolução
AUTOR(ES)
Guilherme de Andrade Garcia
DATA DE PUBLICAÇÃO
1997
RESUMO
We use an Extended Cavity Semiconductor Laser (ECSL) to overcome some drawbacks of solitary diode lasers as limited tuning range, large linewidth and inaccessible spectral regions. The Litman-Metcalf configuration was used because of its several advantages, e.g., a very small passband due to using a grating in double passage grazing incidence. This laser configuration allowed 10 GHz continuous and ± 5 nm discontinuous tuning range, with 3 mW output power in a stable elliptical beam, using a commercial diode laser with no special coatings. With a good commercial power supply and active temperature control we estimated a 2 MHz linewidth. Employing this ECSL as a laser spectrometer we investigated by saturated absorption sub-Doppler techniques a strong set of DJ = -1(a 5Fi ® z 5Djodd) lines of neutral titanium in the vicinity of 845 nm. Using a home made hollow cathode lamp with as non-enriched titanium cathode and argon buffer gas we produced a gaseous sample with highly populated lower metastable levels. The frequency scale was calibrated by the transmission peaks of a Fabry-Perot confocal interferometer with 75 MHz free spectral range. This apparatus enabled us to extract precise isotope shifts and hyperfine splitting constants from the even and odd isotopes, allowing separation of the field and specific mass shifts contributions
ASSUNTO(S)
titanio - espectroscopia lasers semicondutores espectroscopia de laser
ACESSO AO ARTIGO
http://libdigi.unicamp.br/document/?code=vtls000123542Documentos Relacionados
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