Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVD

AUTOR(ES)

Teixeira, R. C., Doi, I., Diniz, J. A., Swart, J. W., Zakia, M. B. P.

FONTE

Brazilian Journal of Physics

DATA DE PUBLICAÇÃO

2006-06

RESUMO

As device dimensions shrink to the deep-submicron scale, new challenges arises from the very small scale used and even poly crystalline silicon (poly-Si) presents problems as gate electrode. The use of SiGe as gate material can present many advantages over the poly-Si, as it leads to a lower boron penetration and gate depletion. In this paper authors present some morphological studies of polycrystalline SiGe thin films deposited in a vertical LPCVD (Low Pressure Chemical Vapor Deposition) reactor for using as MOS (Metal Oxide Semiconductor) gate electrode.

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