Obtenção de filmes finos isolantes de SiO2 e Si3N4 por deposição quimica a fase vapor auxiliada por plasma remoto

AUTOR(ES)
DATA DE PUBLICAÇÃO

1996

RESUMO

Dieletric films, are used in a large amount of applications in semicondutors devices. Several plasma enhanced deposition techniques have been studied in order to obtain insulating materiais with quality that can be employed in processes of manufacturing of devices. In this work, depositions of two different dieletric films are studied, with two different techniques. Silicon oxide films were deposited by combination of two reactant gases: Silane (SiH4) and Oxygen (02) or Nitrous Oxide (N2O), in a temperature range from 300 to 600°C and in a Remote Enhanced Plasma Chemical Vapor Deposition - RPECVD system. Silicon Nitride films were obtained by Silane and Nitrogen (N2), in temperature range from 40 to 90°C and in a Electron Cyclotron Resonance Remote Plasma Enhanced Chemical Vapor Deposition, ECR - RPECVD system. The characterization of the films were: Deposition rate, Etching rate, Refractive index and Stoichiometry. Finally, the behavior of this characteristics versus process parameters were studied. The best processing conditions were determined Silicon oxide films with the following characteristics can be obtained: Deposition rate =100 Ã/min, Etch - rate = 170 Ãlmin, Refraction index = 1,465, Tensile stress = 1,2 X 1010 dyne/cm2 and Stoichiometry = 1,82. In the case of Silicon nitride, the best characteristics were: Deposition rate = 109 Ã/min, Etch rate = 190 Ã/min, Refraction index = 1,995 and Si/N = 0,75

ASSUNTO(S)

filmes finos nitreto de silicio oxidos plasma (gases ionizados)

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