Simulação numérica bidimensional de crescimento de ligas binárias utilizando processamento paralelo / Bidimensionalnumericalsimulationofgrowthofbinaryalloysusingparallelprocessing

AUTOR(ES)
DATA DE PUBLICAÇÃO

2001

RESUMO

The directional solidification of semiconductor alloys is an usual technique for the attainment of a high quality crystalline substratum. This technique is a prototype for the study of macrocospic transport phenomena and involves the coupling of the conservation equations for mass, moment and energy. The crystalline properties of the alloy depend basically on the morphology and stability of the solid-liquid interface during growth. The proposed numerical method solves these transport equations by discretization in control volumes with tracking of the interface. It allows for materials with variable properties and boundary conditions, and to include details of the alloy phase diagram. Two-dimensional, fixed-mesh simulations of binary alloy growth have been carried out. Due to the high spatial and temporal resolutions, these simulations were run on a multiprocessed machine and on a multicomputer composed by a cluster of two microcomputers. The programs were compiled in High Performance Fortran (HPF).

ASSUNTO(S)

ligas binárias directional solidification mathematical models solidificação direcional modelos matemáticos binary alloys testes de desempenho computaÇÃo aplicada performance tests parallel processing processamento paralelo método de bridgman bridgman method

ACESSO AO ARTIGO

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