Structure and bonding of iron-acceptor pairs in silicon

AUTOR(ES)

Zhao, S., Justo, J. F., Assali, L. V. C., Kimerling, L. C.

FONTE

Brazilian Journal of Physics

DATA DE PUBLICAÇÃO

2002-06

RESUMO

Iron-acceptor pairs (Fe-A, A = B, Al, Ga, and In) in silicon were investigated using an ionic-based model, which incorporates the valence electron cloud polarization and the lattice relaxation.Our results are generaly in good agreement with the experimental trends among the Fe-A pairs, describing the increase in the pair donor energy level with increasing A principal quantum number and decreasing pair separation distance, and the pair configurational symmetries.

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