Study of electrical characterization of 2-methyl-9, 10-di(2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer

AUTOR(ES)

Hsieh, Ming-Ta

FONTE

American Institute of Physics

RESUMO

An efficient p-doped transport layer composed of an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) and tungsten oxide (WO3) has been developed. The admittance spectroscopy studies show that the incorporation of WO3 into MADN can greatly improve the hole injection and the conductivity of the device. Moreover, when this p-doped layer was incorporated in the tris(8-quinolinolato)aluminum-based device, it achieved a current efficiency of 4.0 cd∕A and a power efficiency of 2.4 lm∕W at 20 mA∕cm2. This work paves the way to simplify the fabrication of future p-i-n organic light-emitting devices with a single common ambipolar MADN material.

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