The electronic behavior of poly(3-octylthiophene) electrochemically synthesized onto Au substrate
AUTOR(ES)
Valaski, Rogério, Moreira, Liadáurea M., Micaroni, Liliana, Hümmelgen, Ivo A.
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2003-06
RESUMO
We investigate the electronic characteristics and the absorption spectra of poly(3-octylthiophene), POT, films grown by electrochemical methods onto Au substrates. We discuss the results considering the morphological factor. POT films thickness can be controlled by current density in the electropolymerization process. The film roughness depends on the thickness, being about 12% of film thickness. The samples for electrical measurements were made in sandwich structure, Au/POT/metal (metal: Ni, Al). Analyzing current-voltage data we were able to estimate the positive charge carrier mobility (5 x 10-4 cm² V-1 s-1) and the potential barrier height in the metal/polymer interfaces (0.1 eV for Au/POT and Ni/POT and 0.85 eV for Al/POT).
Documentos Relacionados
- Poly(3-methylthiophene-co-3-octylthiophene) based solid-state photoelectrochemical device
- Poly(3-octylthiophene)/stearic Acid Langmuir and Langmuir-Blodgett films: Preparation and characterization
- Ultramicroelectrode array behavior of electrochemically partially blocked boron-doped diamond surface
- Thermal and mechanical behavior of injection molded Poly(3-hydroxybutyrate)/Poly(epsilon-caprolactone) blends
- Influence of Bisphosphonates on the Behavior of Osteoblasts Seeded Onto Titanium Discs