Bragg Mirrors
Mostrando 1-6 de 6 artigos, teses e dissertações.
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1. Estruturas de bandas e propriedades de simetria dos modos eletromagnéticos em um cristal fotônico unidimensional
We perform in this work, through the techniques of transfer matrix, an analytical study of the photonic band structure and the density of states of a one dimensional photonic crystal consisting of a super-lattice composed by two alternating layers of air and GaAs of thicknesses a and the b, respectively. We find photonic band gaps, as expected, and also null
Publicado em: 2007
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2. Estruturas multicamadas de silício poroso para aplicação em dispositivos de cristais fotônicos. / Porous silicon multilayers structures for application in photonic crystals device.
The aim of the present work was to study and analyze the optical response of one- dimensional (1D) photonic crystal devices obtained by using the porous silicon technology. The experimental results obtained from this work showed the significant contribution to the development of a technological process for optical device fabrication in the silicon substrate.
Publicado em: 2007
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3. Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP
We present a comparative study carried out on the optical and electrical characteristics of undoped and Te doped AlGaAsSb/AlAsSb Bragg mirrors with 6.5 pairs of layers and bulk undoped and Te doped AlGaAsSb epilayers alloys lattice matched on InP, grown by molecular beam epitaxy, using SIMS, photoluminescence, reflectivity and IxV techniques. The temperature
Brazilian Journal of Physics. Publicado em: 2006-12
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4. Características elétricas e ópticas de espelhos de Bragg do sistema AIGaAsSb/ AIAsSB sobre INP
O objetivo deste trabalho é o estudo de espelhos de Bragg do sistema AlGaAsSb/AlAsSb não dopado e dopados com Te, preparados pela técnica de BEM sobre substrato de InP, empregados em VCSELs na região de 1,55 µm. Empregando a técnica Hall, absorção, SIMS e principalmente fotoluminescência, foi realizada uma análise comparativa e sistemática entre a
Publicado em: 2006
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5. Difração multipla de raios-X no estudo de ordenamento em ligas semicondutoras e defeitos em semicondutores implantados
The aim of this work is to develop the X-ray multiple diffraction, as a new technique to characterize semiconductors wafers submitted to ion implantation and, epitaxial layers that presents atomic ordering. The technique was also of great usefulness in the study of the heterostucture lattice coherence. The sensitivity of the Bragg-surface diffraction (BSD) c
Publicado em: 1999
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6. Screw rotations and glide mirrors: Crystallography in Fourier space
The traditional crystallographic symmetry elements of screw axes and glide planes are subdivided into those that are removable and those that are essential. A simple real-space criterion, depending only on Bravais class, determines which types can be present in any space group. This terminological refinement is useful in expressing the complementary relation
The National Academy of Sciences.