Carrier Mobility
Mostrando 1-12 de 53 artigos, teses e dissertações.
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1. Temperature influence on mobility and charge density model of photovoltaic cells
abstract Photovoltaic (PV) devices that capture the energy provided by the sun have great potential as renewable energy sources. However, the input parameters such as the luminous intensity and temperature of the solar cells tend to influence the operating characteristics in the solar panels. The inherent physical processes that cannot be altered limit the e
Rev. Bras. Ensino Fís.. Publicado em: 18/02/2019
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2. Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates
Indium-doped zinc oxide (IZO) polycrystalline thin films were grown on polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and as reference on 7059 Corning glass substrates at room temperature by radio frequency magnetron sputtering from a target prepared with a mixture of ZnO and In2O3 powders. The structural, optical, and electrical propertie
Mat. Res.. Publicado em: 06/09/2018
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3. Ga Dopant Induced Band Gap Broadening and Conductivity Enhancement in Spray Pyrolysed Zn0.85Ca0.15O thin Films
Ga doped Zn0.85Ca0.15O thin films were prepared by spray pyrolysis method and studied the impact of Ga doping concentration on the physical properties of these films. XRD analysis confirmed the structural purity and polycrystalline nature of the films and composition analysis verified the incorporation of dopants in the structures. Optical transmission in th
Mat. Res.. Publicado em: 03/09/2018
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4. Improvement of power efficiency of hybrid white OLEDs based on p-i-n structures
ABSTRACT In this article, hybrid white organic light-emitting diodes (WOLEDs) under p-i-n structures have been investigated in terms of power efficiency. By using tris(8-hydroxy quinolinato) aluminum (Alq3) doped with 8-hydroxy-quinolinato lithium (Liq) as an n-type and WHI112 doped with molybdenum trioxide (MoO3) as a p-type, the typical device structure of
Matéria (Rio J.). Publicado em: 05/03/2018
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5. Spray Deposited Nanostructured CuO Thin Films: Influence of Substrate Temperature and Annealing Process
In this study, CuO thin films were deposited on glass substrates at a wide range of temperatures from 450ºC to 550ºC with steps of 25ºC by chemical spray pyrolysis technique. Aiming to investigate the effect of annealing process, one of the resulting films was annealed at 450ºC for 3 hours under ambient air. Based on X-ray diffraction, all the resulting
Mat. Res.. Publicado em: 11/01/2018
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6. Growth and Characterization of AlxGa1-xAs Obtained by Metallic-Arsenic-Based-MOCVD
In this work reports results related to growth and characterization of AlxGa1-xAs epilayers, which were grown in a metallic-arsenic-based-MOCVD system. The gallium and aluminium used precursors were trimethylgallium (TMGa) and trimethylaluminium (TMAl), respectively. By photoluminescence measurements observed, that only samples grown at temperatures above 80
Mat. Res.. Publicado em: 23/03/2017
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7. Development of Electrical Conduction with Beryllium Doping of CdO Nanostructure thin Films
The objective of the present investigation is to study the effect of beryllium doping on the structural, optical, and electrical properties of CdO, focusing on the improvement of carrier mobility (μ) that accompanied with high electrical conductivity and good optical transparency in the near-infrared region. Thus, nanocrystallite Be-doped CdO films were pre
Mat. Res.. Publicado em: 2015-02
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8. Thermal inkjet printing of copper tetrasulfonated phthalocyanine (CuTsPc) as a semiconducting layer on flexible MIS capacitors
Thermal inkjet-printing of copper tetrasulfonated phthalocyanine (CuTsPc) films containing polyvinyl alcohol (PVA) plasticizer were used to fabricate flexible metal-insulator-semiconductor (MIS) capacitors using anodic aluminum oxide (Al2O3) as the insulating layer. The Al2O3 layer and printed CuTsPc+PVA films were characterized individually and in a MIS str
Mat. Res.. Publicado em: 2014-12
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9. Structure and dynamics of poly(9,9-dioctylfluoren-2,7-co-benzothiadiazole) (F8BT) and correlations with its electrical properties / Estrutura e dinâmica molecular do poly (9,9-dioctylfluoren-2,7-diyl-co-benzothiadiazole) (F8BT) e correlações com suas propriedades elétricas.
The PHD project has two main goals. The first one is specifically related to investigations on molecular dynamics, structural conformations and packing of polyfluorene-based polymers. For this purpose, Wide Angle X-Ray Diffraction (WAXD), Solid-State Nuclear Magnetic Resonance (NMR) and Dynamical-Mechanical Thermal Analysis (DMTA) are being used as the main
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 16/09/2011
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10. Structure-biochemical aspects of adenine nucleotide translocase, cardiolipin and ciclophilin D on Ca2+-induced mitochondrial permeability transition / Aspectos bioquímico-estruturais do transportador de nucleotídeos de adenina, cardiolipinas e ciclofilina D na transição de permeabilidade mitocondrial induzida por Ca2+
Oxidation of the Adenine Nucleotide Translocase (ANT) cysteine residue 56 (ANT-cys56) is potentially involved in Ca2+-induced Mitochondrial Permeability Transition (MPT), a process which is prevented by cyclosporine A (CsA), due to its inhibition of Permeability Transition Pore (PTP) opener component, the peptidyl-prolyl cis-trans isomerase cyclophylin D (cy
Publicado em: 2010
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11. Desenvolvimento de uma metodologia de fabricação de transistores de filmes finos orgânicos. / Development of a manufacturing methodology for organic thin film transistors.
In this work, it is presented a methodology for organic thin-film transistor (OTFT) fabrication. Poly(3-hexylthyophene) (P3HT):[6,6]-phenyl-C61-butyric acidmethyl ester (PCBM) bulk heterojunction solar cells were studied for their maximum power conversion efficiency (PCE) around 5 %. Efficiencies evolution in time from 10-6 to 1.7 % show the difficulties inv
Publicado em: 2010
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12. Estudo da mobilidade em dispositivos SOI planares e de múltiplas portas. / Study of carriers mobility in planar and multiple gate SOI devices.
Este trabalho apresenta o estudo do comportamento da mobilidade de portadores em transistores SOI nMOS e pMOS avançados planares e de porta tripla através de simulações tridimensionais e resultados experimentais. Devido à sua estrutura física, os transistores de porta tripla apresentam duas mobilidades, uma referente ao canal de condução na porta sup
Publicado em: 2010