Egfet
Mostrando 1-6 de 6 artigos, teses e dissertações.
-
1. Effects of Measurements Conditions on an Extended-Gate FET used as pH sensor
Fluorine-doped tin oxide (SnO2:F) was investigate as the sensitive part of a pH sensor in the extended-gate field effect transistors (EGFET) device, which provided a linear response for pH range from 2 to 12; the sensitivity was 37 mV.pH-1 for experiments performed in absence of light. Neutral pH, leads to a transistor’s electric current remained practical
Mat. Res.. Publicado em: 05/02/2016
-
2. Comparative Sensibility Study of WO3 ph Sensor Using EGFET and Ciclic Voltammetry
In this present study, the investigation about pH sensorial properties of WO3, via sol-gel, was evaluated by Voltammetry and Extended Gate Field Effect Transistor techniques. The X-ray diffractogram indicates the presence of a lamellar structure, d = 0.69 nm, resulting in WO3.2H2O. From Scanning Electron Microscopy of WO3.2H2O was observed a process correspo
Mat. Res.. Publicado em: 2015-02
-
3. Análise dos procedimentos de medida de dispositivos EGFET utilizando filmes de FTO / Analysis of measurement procedures of EGFET devices using FTO films
Ao longo dos anos a medicina vem se desenvolvendo rapidamente e junto com ela desenvolvem-se os métodos e processos de diagnósticos. Estes métodos ficam mais rápidos, precisos e cada vez menos invasivos graças ao desenvolvimento de dispositivos diagnósticos a cada dia menores e que produzam respostas confiáveis. Os biossensores são, sem dúvida, os g
Publicado em: 2010
-
4. Tin and zinc oxides semiconductor devices / Dispositivos semicondutores a partir de óxidos de estanho e zinco
This work presents the study and development of semiconductor devices base on tin and zinc oxides. The first device is related to the development of pH sensors based on field effect, while the second device uses surface acoustic waves for the transport of carriers related to a single photon detector device. Initially, the semiconductors were used as hydrogen
Publicado em: 2009
-
5. Materiais micro e nanoestruturados para sensores de íons do tipo EGFET / Micro and nanostructured materials for EGFET ion sensor.
Este trabalho descreve os resultados do estudo de materiais como óxido de manganês, nanotubos de carbono e feltro de carbono (puro e recoberto com nanotubos ou polianilina-Pani), assim como do desenvolvimento de dispositivos. Os dispositivos estudados estão relacionados a sensores de pH, utilizando esses materiais como membranas seletivas de H+ . Essas me
Publicado em: 2009
-
6. SnO2 extended gate field-effect transistor as pH sensor
Extended gate field-effect transistor (EGFET) is a device composed of a conventional ion-sensitive electrode and a MOSFET device, which can be applied to the measurement of ion content in a solution. This structure has a lot of advantages as compared to the Ion- Sensitive Field Effect Transistor (ISFET). In this work, we constructed an EGFET by connecting th
Brazilian Journal of Physics. Publicado em: 2006-06