Electron Beam Evaporation
Mostrando 1-10 de 10 artigos, teses e dissertações.
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1. ITO Obtained by Spray Pyrolysis and Coating on Glass Substrate
Conductive thin films have various applications in different technological fields. Indium tin oxide (ITO) is a mixed oxide. In the film form, ITO has been widely employed as electrode in many optoelectronic devices. Methods like thermal evaporation, sputtering, chemical vapor deposition (CVD), electron beam, spray coating, and sol-gel synthesis give ITO thin
J. Braz. Chem. Soc.. Publicado em: 2017-12
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2. Electrical and Optical Transport Characterizations of Electron Beam Evaporated V Doped In2O3 Thin Films
Vanadium (5 at. %) doped Indium Oxide (V: In2O3) thin films with different thicknesses (50 nm, 100 nm and 150 nm) were prepared onto glass substrate by electron beam evaporation technique in a vacuum of about 4×10-3 Pa. X-ray diffraction (XRD) pattern revealed that the prepared films of thickness 50 nm are amorphous in nature. Temperature dependence of elec
Mat. Res.. Publicado em: 08/12/2016
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3. Study on Needles and Cracks of Tin-doped Indium Oxide Tablets for Electron Beam Evaporation Process
Tin-doped indium oxide (ITO) tablets were used to deposit ITO films on p-GaN layer of light-emitting diodes. Needles and cracks in ITO tablets generated during electron beam evaporation process were deeply investigated. The formation of needles is predominantly resulted from the scanning trace, which is controlled by x and y axes scanning singles. The needle
Mat. Res.. Publicado em: 2015-06
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4. Análise de filmes antirreflexo de dióxido de titânio e nitreto de silício em células solares P+NN+
In this work we compared the antireflection coatings of titanium dioxide and silicon nitride for p+nn+ solar cell fabrication. This type of solar cell is more stable in the long term compared to n+pp+ cells and allows obtaining higher efficiencies. TiO2 films were produced by evaporation in high vacuum by electron beam and by chemical vapor deposition at atm
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 07/12/2012
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5. Efeitos fotoinduzidos em vidros e filmes de fosfato de antimônio dopado com chumbo e fosfato de antimônio dopado com cromo / Photoinduced effects in glasses and films of lead doped antimony phosphate and chromium doped antimony phosphate
The present work is about the study of the optical and structure properties of doped antimony phosphate glasses and thin films. The glasses were produced by the melting of precursors [Sb(PO3)3]n + Sb2O3 using PbO and Cr2O3 as dopant at 900 °C in vitreous carbon crucibles, then poured and quickly cooled into steel molds. The vitreous composition are: 20% [Sb
Publicado em: 2010
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6. Isolantes de porta com altas constantes dieletricas (High K) para tecnologia MOS / High K gate insulators for MOS technology
High k insulators for the next generation (sub-32 nm CMOS (complementary metaloxide-semiconductor) technology), such as titanium oxide (TiOx), titanium oxynitride (TiOxNy), titanium-aluminum oxynitride (AlxTiwOyNz), titanium-aluminum nitride (AlxTiwNz) and titanium-aluminum oxide (AlxTiwOy), have been obtained by Ti or Ti/Al e-beam evaporation, with addition
Publicado em: 2008
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7. Desenvolvimento de filmes finos de óxidos condutores e transparentes de ZnO para aplicação em células solares
In this work, transparent and conducting undoped zinc oxide (ZnO) thin films were developed with transmittance and electrical resistivity appropriate for application as frontal contact in solar cells. Because of their chemical stability, good electro-optical properties, large band gap, abundance in nature and low toxicity, the ZnO films have emerged as one o
Publicado em: 2007
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8. Construção de um sistema de epitaxia por feixe molecular / Building of a molecular beam epitaxy system
O crescimento epitaxial de nanoestruturas semicondutoras e metálicas é algo de grande interesse atualmente em ciência e tecnologia devido às propriedades singulares apresentadas pela matéria na escala nanométrica. Esta dissertação teve como objetivo principal a construção de um sistema de crescimento epitaxial baseado na técnica de epitaxia por fe
Publicado em: 2007
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9. Modificação das propriedades superficiais de materiais através da implantação de cromo por recoil por meio de implantação iônica por imersão em plasma de nitrogênio / Modification of surface properties of materials by chromium recoil implantation using nitrogen plasma immersion ion implantation
The objective of this work is the modification of the surface properties of conductive materials (carbon steel) and semiconductors (silicon) using the implantation of chromium atoms, deposited on the surface of materials as thin films, using plasma immersion ion implantation. In this study we seek to understand the basic process of recoil implantation (using
Publicado em: 2007
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10. Ten- to 50-nm-long quasi-ballistic carbon nanotube devices obtained without complex lithography
A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths of ≈10–50 nm between metal contacts. Large numbers of such short devices are obtained without the need of complex tools such as electron beam lithography. Metallic SWCNTs with lengths of �
National Academy of Sciences.