Electron Beam Lithography
Mostrando 1-7 de 7 artigos, teses e dissertações.
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1. Implantação iônica de baixa energia em polímero para desenvolvimento de camadas compósitas nanoestruturadas condutoras litografáveis. / Low energy ion implantation into polymers to develop conductive composite layers for lithography.
Electronics using polymers instead of silicon is a recent research area with promising economic perspectives. Polymer with metallic particles composites presents interesting electrical, magnetic and optical properties and they have been produced by a broad variety of techniques. Metal ion implantation using plasma is one of the used methods to obtain conduct
Publicado em: 2010
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2. Desenvolvimento de processo litográfico tri-dimensional para aplicação em microóptica integrada. / Development of three-dimensional lithographic process for application in integrated micro-optics.
O presente trabalho tem como objetivo desenvolver um processo de fabricação de elementos micro-ópticos utilizando-se litografia por feixe de elétrons, empregando o resiste SU-8, negativo e amplificado quimicamente, sobre substrato de Si. Para tanto, é realizado o estudo dos parâmetros do efeito de proximidade a, b e h para se modelar e controlar os efe
Publicado em: 2010
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3. Nanocomposites and nanostructures of II-VI and IV-VI semiconductors / Nanocompositos e nanoestruturas de semicondutores das familias II-VI e IV-VI
The development of nanostructures and their applications constitute one of the most exciting scientific areas. A great number of studies in this area concern the preparation methods. Generally, they are classified in physical and chemical methods. The former class is based on molecular beam and lithography techniques, while the latter involves chemical react
Publicado em: 2007
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4. Electrical characterization of PbTe p-n junctions for applicarion in infrared detectors. / Caracterização elétrica de junções p-n de PbTe para aplicação em detectores de infravermelho.
This work reports on the electrical characterization of PbTe p-n junctions for application in photovoltaic detectors in the medium infrared range. For this purpose, a series of p-n junctions, where the hole concentration p was kept at 1017 cm-3 and the electron concentration n varied between 1017 and 1019 cm-3, was successfully grown by molecular beam epitax
Publicado em: 2004
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5. Estudo de Litografia por Feixe de Elétrons para a Produção de Padrões Sobre Substratos de Eletroestruturas / Study of electron beam lithografhy for patterns production on semiconductor heterostructrucres substrata.
Este trabalho trata do estudo das condições para a produção de padrões em escala nano e micrométricas, utilizando o processo de litografia eletrônica. A parte inicial refere-se ao estudo do elétron-resiste de PMMA incluindo a preparação da solução, o recobrimento do substrato e a secagem. Em seguida, são apresentados estudos sobre o funcionament
Publicado em: 1996
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6. Ten- to 50-nm-long quasi-ballistic carbon nanotube devices obtained without complex lithography
A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths of ≈10–50 nm between metal contacts. Large numbers of such short devices are obtained without the need of complex tools such as electron beam lithography. Metallic SWCNTs with lengths of �
National Academy of Sciences.
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7. Commensurability and stability in nonperiodic systems
We have investigated the response of 3D Bi2Sr2CaCu2O8 vortex structures to a weak perturbation induced by 2D Fe pinning structures acting on one extremity of vortex lines. The pinning patterns were nano-engineered at the sample surface by means of either a Bitter decoration of the vortex lattice or electron-beam lithography. The commensurability conditions b
National Academy of Sciences.