Gaas
Mostrando 1-12 de 225 artigos, teses e dissertações.
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1. Propriedades estruturais, eletrônicas e termodinâmicas de ligas semicondutoras baseadas em tálio
Apresentamos um estudo teórico de ligas semicondutoras baseadas em tálio, na estrutura cúbica zincblende, com a possibilidade de serem um alternativa viável para os dispositivos optoeletrônicos que atuam na região do comprimento de onda do infravermelho. A metodologia empregada foi a combinação de cálculos de primeiros princípios de estrutura eletr
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 2028
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2. Review of Power Device for Solar-Powered Aircraft Applications
ABSTRACT This paper reviews various power device components of solar-powered aircraft such as photovoltaic (PV) cells, maximum power point tracker (MPPT) and rechargeable batteries. The various power device components were highlighted, and the ones applicable to aircraft were analyzed, based on criteria as efficiency for photovoltaic cells; energy densities
J. Aerosp. Technol. Manag.. Publicado em: 10/10/2019
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3. Theoretical study of c-GaN/GaAs single heterojunction solar cells
ABSTRACT In this work a theoretical study of electrical behavior for a c-GaN/GaAs heterostructure as a photovoltaic device through a two-dimensional (2D) finite element numerical simulation is presented for a first time. I-V curves and electrical parameters like short circuit current (Isc), open circuit voltage (Voc), fill factor (FF) and efficiency (η) wer
Matéria (Rio J.). Publicado em: 02/10/2017
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4. Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates
This work presents the characterization of ZnTe nanolayers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes possible the growth of atomic layers in a reactor where the atmosphere is high-purity hydrogen. ZnTe was grown
Mat. Res.. Publicado em: 23/03/2017
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5. Efeitos do laser GaAs e alongamento na contusão muscular em ratos
RESUMO Laser e alongamento são usados para tratar lesões musculares. Este estudo objetivou avaliar os efeitos do laser GaAs e alongamento na morfologia do músculo Tibial anterior (TA) após contusão. Trinta e seis ratos (349±23 g) foram divididos em seis grupos (n=6): grupo controle (GC); grupo lesão e laser (GLL); grupo lesão e alongamento (GLA); gru
Fisioter. Pesqui.. Publicado em: 2016-03
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6. Analysis and Design of a GaAs Monolithic Tunable Polyphase Filter in S/C Bands
AbstractThis paper proposes a new topology of a 2-Stages Active Polyphase Filter (APPF) in MMIC GaAs technology. This new topology, named “radial”, allows a greater balancing of output signals phases and amplitudes, over the actual APPF’s at the state of the art. In this paper an ex-novo study is shown and synthesis formulas for the APPF are provided.
J. Microw. Optoelectron. Electromagn. Appl.. Publicado em: 2015-06
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7. Phase transition and elasticity of gallium arsenide under pressure
Geometry optimization calculations were performed for some structural, elastic and mechanical properties of gallium arsenide (GaAs) under pressures up to 25 GPa. In contrast to previous works, a recent Stillinger-Weber type potential was used for the first time to elaborate the pressure dependence aspects of GaAs. B3→B1 phase transition pressure was determ
Mat. Res.. Publicado em: 15/08/2014
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8. Photo-Induced conductivity of heterojunction GaAs/Rare-Earth doped SnO2
Rare-earth doped (Eu3+ or Ce3+) thin layers of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with gallium arsenide (GaAs) films, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, because it may combine the emission from the rare-earth-doped transpa
Mat. Res.. Publicado em: 23/04/2013
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9. Aplicações de corrosão por plasma usando reatores ICP e RIE para tecnologia MEMS / Plasma etching applications using ICP and RIE reactors for MEMS technology
This thesis is based on etching processes applications in cold plasmas (room temperature) using RIE (Reactive Ion Etching) and ICP (Inductively Coupled Plasma), as reactors, applied to specific areas of microelectronics and MEMS devices in semiconductors industries and laboratories. Five applications are presented: Thinning gate CMOS Transistor - conventiona
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 28/08/2012
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10. Efeito de interface nas propriedades ópticas de pontos quânticos de InP/GaAs / Interface effect on the optical properties of InP/GaAs quantum dots
We studied the effect of different interface conditions on the optical properties of InP/GaAs self-assembled quantum dots grown by chemical beam epitaxy in the Stranskii-Krastanov mode. InP/GaAs quantum dots is expected to present type II band alignment, and only electrons are confined, whereas the holes are localized in the GaAs layers around the quantum do
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 27/08/2012
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11. Crescimento e caracterização de nanofios auto-sustentados de ligas ternárias de InGaAs
Nanofios de ligas ternárias de Arseneto de Gálio e Índio (InxGa1-xAs) são excelentes candidatos para aplicações tecnoógicas em dispositivos eletrônicos e optoeletrônicos, mas existem uns poucos estudos experimentais sobre seu crescimento que permitam obter um controle e conhecimento significativo das suas propriedades óticas e elétricas. Este trab
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 01/03/2012
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12. Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample
Magnetoresistance measurements were performed on an illuminated semi-insulating GaAs sample with intrinsic deep level defects. Electrical carriers were photo-generated under light excitation and positive magnetoresistance for B < 0.2 T was observed in the whole range of temperatures measured (220-315 K). Using the model developed by H. Fukuyama and K. Hoshin
Materials Research. Publicado em: 26/06/2012