Gallium Nitride
Mostrando 1-6 de 6 artigos, teses e dissertações.
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1. Structural and Optical Properties of GaN Thin Films Grown on Si (111) by Pulsed Laser Deposition
In this work we present results and analysis concerning the processing and characterization of Gallium Nitride (GaN) thin films (TF) grown on Si (111) substrates by pulsed laser deposition technique (PLD), which were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy (RS). The GaN films show
Mat. Res.. Publicado em: 14/01/2019
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2. Synthesis of Gallium Nitride and Related Oxides Via Ammonobasic Reactive Sublimation (ARS)
Ammonobasic reactive sublimation (ARS) is proposed as a novel method to synthesize GaN and related oxides. Results indicate that GaN growth occurs by a nitriding process of Ga and related oxides, establishing a direct dependence on NH4OH amount added as a primary chemical reactive. The samples were grown on p-type Si (111) substrates inside a tube furnace, e
Mat. Res.. Publicado em: 28/09/2017
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3. Filtros acústicos em cristais fonônicos
In this work, we have studied the acoustic phonon wave propagation within the periodic and quasiperiodic superlattices of Fibonacci type. These structures are formed by phononic crystals, whose periodicity allows the raise of regions known as stop bands, which prevent the phonon propagation throughout the structure for specific frequency values. This p
Publicado em: 2009
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4. Electron mobility study of hot-wall CVD GaN and InN nanowires
A review of the dependence of the electron mobility on the free carrier concentration for gallium nitride and indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gallium nitride nanowires exhibit mobilities of 100 cm²/Vs to below 1 cm²/Vs for carrier concentrations of 10(19) to 10(20) cm- 3. Theoretical estimations and an
Brazilian Journal of Physics. Publicado em: 2006-09
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5. SÍNTESE DE PÓS DE NITRETO DE GÁLIO POR REAÇÃO GÁS-SÓLIDO UTILIZANDO CARBONO COMO AGENTE REDUTOR / SYNTHESIS OF GALLIUM NITRIDE POWDER FROM GAS-SOLID REACTION USING CARBON AS REDUCING AGENT
O nitreto de gálio (GaN) é um dos mais interessantes e promissores materiais para aplicação em dispositivos óptico- eletrônicos. GaN pode ser usado para a fabricação de diodos e lasers azuis. O desenvolvimento deste tipo de material está relacionado com três campos principais: 1) deposição de camadas de GaN cristalino; 2) produção de nano- fila
Publicado em: 2002
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6. Filmes finos de WN e ALN e suas aplicações na fabricação de transitores mesfet
Tungsten Nitride (WN) and Aluminum Nitride (AlN) thin films were deposited by DC sputtering in Nitrogen ambi~nt and characterized in this work. Gallium Arsenide Schottky diodes were used in the characterization of WN films. The diodes were subject to thermal treatments to study the thermal stability of the contacts, as in the fabrication process of MESFET tr
Publicado em: 2000