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Ver documentoAs estruturas metal-óxido-semicondutor (MOS) são o coração dos transistores de efeito de campo. O estudo e caracterização físico-química desses dispositivos foram a chave para o avanço da tecnologia do Si na indústria microeletrônica. Hoje, a ciência busca novos materiais para a ...
Ver documentot: The addition of small quantities of bismuth to hydrogenated amorphous germanium (a-Ge:H), changed its electrical conductivity and bandgap. Detailed data were obtained from measurements of electrical conductivity, optical and infrared transrnission, and from photothermal deflec...
Ver documentoThe main objective of this work is to research and obtain surface protected topological states in nano-ribbons created from the leaves of Germanene and Silicene. These sheets belong to the class of Topological Insulators and correspond to monolayers of germanium and silicon atoms...
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