Growth Of Two Dimensional Structure Of Gases
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1. Growth of the In0.53Ga0.47As/ In0.52Al0.48As on InP by MBE / Crescimento de In0.52Al0.48As e In0.53Ga0.47As sobre InP por MBE
In this work Molecular Beam Epitaxy (MBE) was used to growth bidimensional gas structures based on In0.53Ga0.47As/ In0.52Al0.48As on Indium Phosfate substrate (lnP) Structural. electrical and optical properties were analyzed by characterisation techniques such as Hall eflect, photoluminescence (PL), Shubnikov-de Haas (SdH) and Scanning Electron Microscope (S
Publicado em: 1997