Impurity Donor In A Semiconductor
Mostrando 1-2 de 2 artigos, teses e dissertações.
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1. Study of incorporations of donor impurities in III-V semiconductor structures grown by molecular beam epitaxy. / Estudo de incorporações de impurezas doadoras em estruturas semicondutoras III-V crescidas por epitaxia por feixes moleculares.
III-V semiconductor samples were grown using the Molecular beam epitaxy technique, the electrical properties of the GaAs structures planar doped with silicon were investigated as well as the Silicon saturation and diffusion in these samles. The optcal and electrical properties of structures planar doped with Selenium were analyzed using the Capacitance Volta
Publicado em: 1993
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2. Polaronic effects in one and two dimensional semiconductor heterostructures. / Efeitos polarônicos em estruturas semicondutoras em uma e duas dimensões.
In this work we study the polaronic effects on the two dimensional electron gas present in semiconductor heteroestructures (GaAs-AlGaAs heterojunctions and quantum wells) when a uniform magnetic field is applied perpendicular to the interface, using second order perturbation theory. By taking into account the effect of nonparabolicity and screening of the el
Publicado em: 1988