Low Dimensional Devices
Mostrando 1-12 de 13 artigos, teses e dissertações.
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1. Dynamically Configurable Nonlinear Optical Switching Based on Vertically Aligned Carbon Nanotubes
Abstract The modification of the third order nonlinear optical response exhibited by vertically aligned carbon nanotubes in two-wave mixing interactions was analyzed. All-optical switching effects were explored by using a vectorial optical Kerr gate with nanosecond pulses at 532 nm wavelength of excitation. The samples were prepared by a spray pyrolysis meth
Mat. Res.. Publicado em: 01/08/2016
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2. CuO Nanofibers Immobilized on Paraffin-Impregnated Graphite Electrode and its Application in the Amperometric Detection of Glucose
1-D nanostructures are promising materials for development of electrochemical devices offering benefits such as fast electron transfer rates and large surface areas. Copper oxide nanofibers (CuO-NFs) synthesized by electrospinning technique and subsequent thermal treatment, were used to modify paraffin-impregnated graphite electrode (PIGE) for a sensitive
J. Braz. Chem. Soc.. Publicado em: 2015-08
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3. Filtros digitais por transformadas de Fourier aplicados em eletroquímica
The electrochemical properties of micro and nano-electrodes are widely investigated due to their low faradaic and capacitive currents, leading to a new generation of smart and implantable devices. However, the current signals obtained in low-dimensional devices are strongly influenced by noise sources. In this paper, we show the evaluation of filters based o
Quím. Nova. Publicado em: 2013
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4. Propriedades magneto-óticas e de magneto-transporte de um diodo de tunelamento ressonante contendo Si δ - doping no poço quântico
In this work, we have studied the transport and optical properties of GaAs = AlGaAs resonant tunneling diodes with Si delta-doping at the center of the quantum well. We have studied magneto-transport and polarized resolved photoluminescence from GaAs quantum well and contact layers as a function of applied voltage and magnetic _eld parallel to the tunnel cur
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 11/03/2011
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5. Análise dos parâmetros analógicos do dispositivo SOI DTMOS. / Analog performance of dynamic threshold voltage SOI MOSFET.
This work presents the study of analog performance parameters of PDSOI (Partially-depleted) transistor in comparison with a Dynamic Threshold MOS transistor (DTMOS). The DTMOS is a partially-depleted device with dynamic threshold voltage. This variation of threshold voltage is obtained when the gate is connected to the silicon film (channel) of the PDSOI dev
Publicado em: 2009
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6. Evaluation and modelling of integral capacitors produced by interdigitated comb electrodes
Integral capacitors (IC) of one or two-layer printed wiring board (PWB) circuits were produced using comb electrodes fixtures and dielectric composites as the inter-electrode material. ICs were fabricated at laboratory scale, using copper comb electrodes and BaTiO3-epoxy composite materials deposited on a glass-Epoxy FR4 board. They were experimentally teste
Materials Research. Publicado em: 2008-12
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7. Estruturas multicamadas de silício poroso para aplicação em dispositivos de cristais fotônicos. / Porous silicon multilayers structures for application in photonic crystals device.
The aim of the present work was to study and analyze the optical response of one- dimensional (1D) photonic crystal devices obtained by using the porous silicon technology. The experimental results obtained from this work showed the significant contribution to the development of a technological process for optical device fabrication in the silicon substrate.
Publicado em: 2007
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8. Nanomanipulation and characterization of individual nano-objects for in situ experiments of electron microscopy / Nanomanipulação e caracterização de nano-objetos individuais por experimentos in situ de microscopia eletronica
It is expected that, in the future, high-technology devices should be based on new and unexpected physical and chemical properties of nanometric objects. Many applications require nano-objects to be selectively positioned at well-defined positions of a device. However, the well-established methods of physical manipulation used in the macroscopic scale are no
Publicado em: 2007
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9. Caracterização elétrica de capacitores obtidos através de tecnologia ultra-submicrométrica. / Electrical characterization of capacitors obtained through extreme-submicrometer technology.
In this work we present the study of polysilicon depletion and the gate tunneling current effects in thin-gate oxide devices. Characteristic curves of capacitance as a function of the gate voltage (C-V) were used to analyze the degradation caused for these effects. Regarding the poly depletion effect, a reduction of the total capacitance in the inversion reg
Publicado em: 2006
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10. Cálculo de propriedades eletrônicas de heteroestruturas semicondutoras quase zero-dimensionais quantum dots (QDs) / Electronic properties calculation of quasi-zero-dimensional semiconducting heterostructures (quantum dots)
Neste trabalho utilizamos o método k.p na aproximação de função envelope, que é uma ferramenta muito útil para a solução de problemas relacionados a heteroestruturas em geral. Apresentamos a análise de heteroestruturas semicondutoras com confinamento espacial nas três direções de crescimentos {Quantum Dots}, utilizando o Hamiltoniano de Kane (8x
Publicado em: 2006
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11. Multidimensional modelling and calculation of combustion in porous media
In contrast with household heating systems based on open combustion flames, burners based on premixed combustion in inert porous media are characterized by higher thermal efficiency and high turndown ratio allied with compacity of the units. Moreover, porous burners, where a flame is anchored inside a porous matrix, are associated with low pollutants formati
Publicado em: 2005
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12. Projeto de atuadores piezelétricos flextensionais usando o método de otimização topológica. / Design of flextensional piezoelectric actuator using the topology optimization method.
Flextensional Piezoelectric Actuators consist of a flexible structure actuated by piezoelectric ceramics (or a stack of piezoceramics). The flexible structure connected to the piezoceramic must generate displacements and forces in different specified points of the domain, according to a specific direction. These actuators are applied to precision mechanic ap
Publicado em: 2003