Mocvd Growth
Mostrando 1-7 de 7 artigos, teses e dissertações.
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1. Effect of Growth Parameters on the Photocatalytic Performance of TiO2 Films Prepared by MOCVD
The present study evaluated the main factors that influence the photocatalytic activity of titanium dioxide (TiO2) films grown by metalorganic chemical vapor deposition (MOCVD) at 400 and 500 °C, in different growth times. The photocatalytic behavior was analyzed by measuring the methyl orange dye degradation at different pH values. Structural and morpholog
J. Braz. Chem. Soc.. Publicado em: 2020-06
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2. Growth and Characterization of AlxGa1-xAs Obtained by Metallic-Arsenic-Based-MOCVD
In this work reports results related to growth and characterization of AlxGa1-xAs epilayers, which were grown in a metallic-arsenic-based-MOCVD system. The gallium and aluminium used precursors were trimethylgallium (TMGa) and trimethylaluminium (TMAl), respectively. By photoluminescence measurements observed, that only samples grown at temperatures above 80
Mat. Res.. Publicado em: 23/03/2017
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3. Growth and characterization of low dimensional structures for applications in the visible spectrum / Crescimento e caraterização de estruturas de baixa dimensionalidade para aplicações no espectro visivel
Os nitretos (Ga, Al, In)N assim como os compostos GaInP, GaCuO2, representam um sistema de materiais muito importante para as aplicações em opto-eletrônica e dispositivos tais como os diodos emissores de luz (LEDs), lasers e nanosensores. Entretanto, o requisito essencial para as aplicações industriais desses materiais é a redução em seus tamanhos. N
Publicado em: 2007
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4. TiO2 thin film growth using the MOCVD method
Titanium oxide (TiO2) thin films were obtained using the MOCVD method. In this report we discuss the properties of a film, produced using a ordinary deposition apparatus, as a function of the deposition time, with constant deposition temperature (90 °C), oxygen flow (7,0 L/min) and substrate temperature (400 °C). The films were characterized by X-ray diffr
Materials Research. Publicado em: 2001-07
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5. STUDY OF MULTIPLE QUANTUM WELL STRUCTURES WITH NIPI DOPING FOR ELECTRO ABSORPTION MODULATION / ESTUDO DE ESTRUTURAS DE POÇOS QUÂNTICOS MÚLTIPLOS COM DOPAGEM NIPI PARA MODULAÇÃO POR ELETRO-ABSORÇÃO
In this thesis we have studied multiple quantum well structures with Si delta doping inside the GaAs quantum wells and C delta doping in the AlGaAs barriers (nipi). This structure was proposed by W. Batty and D. W. E. Allsopp ( ¤ )as an alternativeto maximize the Stark shift and improve the performance of electroabsorption amplitude modulators.The samples w
Publicado em: 2001
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6. SELECTIVE AREA EPITAXIAL GROWTH OF III-V SEMICONDUCTOR STRUCTURES FOR OPTOELECTRONIC APPLICATIONS / CRESCIMENTO EPITAXIAL SELETIVO DE ESTRUTURAS SEMICONDUTORAS III-V VISANDO A INTEGRAÇÃO OPTOELETRÔNICA
A integração monolítica de um modulador com um guia de onda é de muito interesse para aplicação em comunicações ópticas pelo fato de que podemos diminuir as perdas por acoplamento óptico entre os dois dispositivos e usar moduladores curtos que operem em altas taxas de transmissão de dados. O crescimento epitaxial seletivo é uma das técnicas mais
Publicado em: 2000
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7. Crescimento epitaxial de heteroestruturas de poços quanticos por MOCVD
Using optical and electrical characterizations. We investigated the MOCVD growth of GalnP layers and a variety of heterojunctions showing the viability of replacing Ga0.64Al0.36As by GalnP lattice matched to GaAs substrate. The measured electrical characteristics of heterojunctions has shown that it is possible to monitor the reactor growth conditions. The o
Publicado em: 1991