Monocrystalline Silicon
Mostrando 1-10 de 10 artigos, teses e dissertações.
-
1. Growth and Characterization of Graphene on Polycrystalline SiC Substrate Using Heating by CO2 Laser Beam
The thermal decomposition of silicon carbide (SiC), with the subsequent formation of graphene, can be achieved by heating treatment. Several heating processes have been applied for this purpose by using SiC, either in form of powder particles or monocrystalline substrate. In this work, instead of using an expensive commercially available SiC wafer, a polycry
Mat. Res.. Publicado em: 26/09/2016
-
2. Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations
Boron doped ultrananocrystalline diamond (BDUND) films were grown and characterized on porous silicon (PS) substrates. PS samples were prepared from n-type monocrystalline silicon wafers (100) with 1-20 Ω.cm of resistivity, by electrochemical etching, using HF-acetonitrile solution as electrolyte. BDUND films were grown by Hot Filament Chemical Vapor Deposi
Mat. Res.. Publicado em: 24/11/2015
-
3. Texturização da superfície de silício monocristalino com NH4OH e camada antirrefletora para aplicações em células fotovoltaicas compatíveis com tecnologia CMOS = : Texturing the surface of monocrystalline silicon with NH4OH and anti-reflective coating for applications in photovoltaic cells compatible with CMOS technology / Texturing the surface of monocrystalline silicon with NH4OH and anti-reflective coating for applications in photovoltaic cells compatible with CMOS technology
Este trabalho apresenta o desenvolvimento de células fotovoltaicas de junção n+/p em substratos de Si com processos de fabricação totalmente compatíveis com a tecnologia CMOS (Complementary Metal Oxide Semiconductor). Os processos compatíveis desenvolvidos neste trabalho sao as técnicas: i) de texturização da superfície do Si, com reflexao da supe
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 24/08/2012
-
4. Desenvolvimento de uma metodologia de fabricação de transistores de filmes finos orgânicos. / Development of a manufacturing methodology for organic thin film transistors.
In this work, it is presented a methodology for organic thin-film transistor (OTFT) fabrication. Poly(3-hexylthyophene) (P3HT):[6,6]-phenyl-C61-butyric acidmethyl ester (PCBM) bulk heterojunction solar cells were studied for their maximum power conversion efficiency (PCE) around 5 %. Efficiencies evolution in time from 10-6 to 1.7 % show the difficulties inv
Publicado em: 2010
-
5. Efeito da temperatura na geraÃÃo de energia de mÃdulos fotovoltaicos submetidos a condiÃÃes climÃticas distintas. Estudo de caso para as localidades de Recife e Araripina
Understanding in greater depth the effect of temperature on the performance of photovoltaic modules submitted to varied climatic conditions is the purpose of this work. With this objective, diverse models proposed in literature were studied and the five parameter model was defined as the most appropriate for characterization of photovoltaic cells. The concep
Publicado em: 2008
-
6. Galvanostatic electrodeposition of cadmium telluride on monocrystalline Silicon (111) / Eletrodeposição galvanostática de telureto de cádmio sobre silício monocristalino (111)
No presente trabalho, estudamos filmes finos de CdTe eletrodepositados galvanostaticamente em meio aquoso ácido (pH<1) sobre silício monocristalino, tipo-n, (111). A densidade de corrente de 0,3 mA/cm2 permitiu a obtenção de filmes de melhor qualidade. Os filmes foram caracterizados por microscopia eletrônica de varredura (SEM), difração de raios-X (X
Publicado em: 2006
-
7. Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy
In this work, (100) oriented monocrystalline silicon samples were single point diamond turned under conditions that led to a ductile and brittle regime. Raman spectroscopy results showed that the ductile regime diamond turning of silicon surfaces induced amorphization and, on the contrary, in the brittle mode machining condition this amorphous layer does not
Materials Research. Publicado em: 2005-09
-
8. Caracterização de filmes finos por difração de raios-X com baixo angulo de incidencia
In this work we present a study of thin and ultrathin3 films by X-Ray diffraction with asymmetric ref1ection and small incidence angle using a Guinier goniometer. The main purpose of this work was to study, in general, the properties of the diffraction by asymmetric ref1ection showing alI the possibilities of this technique when applied to the study of thin
Publicado em: 1995
-
9. INSERCAO DA ENERGIA SOLAR FOTOVOLTAICA NO BRASIL / Insertion of photovoltaic solar energy in Brazil
The energy generated by the sun, land of endless time scale, can be used as a source of heat (photothermal aspect) and as the light source. The photothermal solar energy can be used to heat fluids through flat collectors. Previous studies (04,05), developed in Brazil, indicate that the adoption of this solution for heating water would be very advantageous fo
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 14/12/1993
-
10. Estudo das características de células solares de silício monocristalino. / Study of monocrystalline silicon solar cells characteristics.
Systems of measurements were developed for the characterization of single crystal silicon solar cells. For that, the curves I x V were measured in the dark and for different intensity of illumination. Curves of spectral response and of capacitance as a function of the reciprocal of the voltage were also measured. The behavior of the cells as a function of te
Publicado em: 1983