Photolithography
Mostrando 1-12 de 27 artigos, teses e dissertações.
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1. Superhydrophobic silicon fabricated by phosphomolybdic acid-assisted electrochemical etching
Controllable geometry silicon surfaces with superhydrophobicity are difficult to be fabricated without photolithography techniques. Superhydrophobic silicon surfaces with water contact angle larger than 150º and sliding angle less than 10º have been successfully fabricated by electrochemical etching strategy. Squarelike hole arrays with controllable geomet
Quím. Nova. Publicado em: 26/08/2019
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2. Evaluation of piezoresistivity properties of sputtered ZnO thin films
Zinc oxide (ZnO) thin films were deposited by RF reactive magnetron sputtering on silicon (100) substrates under different experimental conditions. ZnO films were studied before and after annealing treatment at 600 °C. The crystallinity, electrical resistivity, stoichiometry, thickness, and elastic modulus of the films were investigated. ZnO piezoresistors
Mat. Res.. Publicado em: 03/06/2014
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3. Aplicações de corrosão por plasma usando reatores ICP e RIE para tecnologia MEMS / Plasma etching applications using ICP and RIE reactors for MEMS technology
This thesis is based on etching processes applications in cold plasmas (room temperature) using RIE (Reactive Ion Etching) and ICP (Inductively Coupled Plasma), as reactors, applied to specific areas of microelectronics and MEMS devices in semiconductors industries and laboratories. Five applications are presented: Thinning gate CMOS Transistor - conventiona
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 28/08/2012
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4. Emissão de elétrons por efeito de campo em dispositivos de grafeno
Since graphene was first isolated in 2004 by the micromechanical exfoliation of graphite, many research groups focused their works in studying the properties of this material. Graphene is a strictly bidimensional system very resilient to mechanical tension which presents high charge carriers mobilities, anomalous quantum hall effect observed even at room tem
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 09/03/2012
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5. Ressonadores de microdiscos com região ativa nanoestruturada bombeados por injeção eletrônica / Microdisk resonators with nanostructured active region pumped by electronic injection
This doctorate¿s thesis presents the growth of InAs quantum dots directly on high bandgap InGaAsP (?g=1420 nm) barriers to be used as the active region of microdisk resonators with emission in the C-band (1520¿1570 nm). Based on photoluminescence and atomic force microscopy experiments, the occurrence of inter-diffusion on the InAs/InGaAsP interface is cal
Publicado em: 2010
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6. Silica vitrea de alto desempenho óptico produzida por método de aerosol em chama para componentes fotônicos / High performance silica glass produced by flame aerosol method for photonic components
Neste trabalho estudou-se o efeito da variação dos parâmetros do processo VAD (Vaporphase Axial Deposition) sobre as propriedades estruturais e ópticas da sílica vítrea visando o desenvolvimento de um material de alto desempenho óptico empregado no sistema óptico de equipamentos litográficos. As propriedades estruturais das preformas foram caracteri
Publicado em: 2009
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7. Construction and evaluation of microsystems for flow analysis / Construção e avaliação de microssistemas para analise em fluxo
This work describes the construction, characterization and application of microsystems for flow analysis. Laser ablation was employed for the development of a system in poly(methylmethacrylate), whose channels, with rectangular cross sections measuring 200 mm width by 4,5 mm depth, were sealed with an adhesive plastic film. This device supported flow rates u
Publicado em: 2008
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8. Three-band quantum well infrared photodetector using interband and intersubband transitions.
This thesis presents the modeling, design, fabrication and characterization of a quantum well infrared photodetector (QWIP) capable of detecting near infrared (NIR), mid wavelength infrared (MWIR) and long wavelength infrared (LWIR), simultaneously. The NIR detection was achieved using interband transition while MWIR and LWIR were based on intersubband trans
Publicado em: 2008
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9. Fabricação e caracterização de Guia de Onda Polimerica a base de PMMA modificado por plasma de CHF3 / Polymeric optical waveguides fabricated by plasma fluorination process
Polymeric optical devices have been studied in communication and interconnection optics due to the intrinsic versatility of polymers molecular structure, that allows advantageous refractive index modeling for core and cladding, and also to their easy fabrication process or patterning capability. PMMA, polymethylmetacrylate, shows the best optical properties
Publicado em: 2007
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10. Construção e caracterização de fotodetetores metal-semicondutor-metal (MSM). / Construction and characterization of metal-semiconductor-metal (MSM) photodetectors.
The goal of this work was the fabrication of Metal-Semiconductor-Metal (MSM) photodetectors with the following characteristics: dark current of about 1 nA, responsivity of about 0.1 A/W and dark/photocurrent ratio of at least 10. These values ensure that the photodetectors have enough sensitivity to be used in integrated optic sensors. All materials used in
Publicado em: 2006
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11. Fabrication and electrical characterization of field emission tips covered by DLC (Diamond Like Carbon) thin films / Fabricação e caracterização eletrica de ponteiras de emissão de campo recobertas com filme fino DLC (Diamond Like Carbon)
The objectives of this dissertation were the fabrication of silicon field emitter tips coated with diamond like carbon (DLC) thin films, and the study of its electrical behavior. We present the fabrication process of silicon tips that consists on four stages: photolithography, reactive ion etching SF6 plasma, thermal oxidation for sharpening, and the DLC dep
Publicado em: 2005
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12. Tecnologia LOCOS utilizando nitretos de silicio depositados por ECR-CVD / LOCOS technology using silicon nitride deposited by ECR-CVD
Silicon nitride (SiNx) insulators for LOCOS applications have been deposited by RP/RTCVD and ECR-CVD at room temperature, at low pressure (5mTorr), with N2 flows of 2.5, 5, 10 and 20sccm with fixed SiH4/Ar flows of 200/20sccm with a microwave power of 1000W on SiO2-Pad/Si and Si substrates. SiNx/Si structures were obtained to analyze the physical characteris
Publicado em: 2005