Polysilicon Depletion Effect
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1. Caracterização elétrica de capacitores obtidos através de tecnologia ultra-submicrométrica. / Electrical characterization of capacitors obtained through extreme-submicrometer technology.
In this work we present the study of polysilicon depletion and the gate tunneling current effects in thin-gate oxide devices. Characteristic curves of capacitance as a function of the gate voltage (C-V) were used to analyze the degradation caused for these effects. Regarding the poly depletion effect, a reduction of the total capacitance in the inversion reg
Publicado em: 2006