Quantum Well Resonant Tunneling
Mostrando 1-10 de 10 artigos, teses e dissertações.
-
1. Magneto luminescência em diodos de tunelamento ressonante contendo pontos quânticos de InAs
In this work, we have studied the spin polarization of carriers in n-type resonant tunneling diodes (RTDs) of GaAs/AlGaAs which incorporates a single layer of InAs selfassembled quantum dots in the center of the GaAs quantum well (QW) grown on (3 1 1)B oriented GaAs substrates.We have performed electrical and optical measurements in the presence and absence
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 15/03/2011
-
2. Propriedades magneto-óticas e de magneto-transporte de um diodo de tunelamento ressonante contendo Si δ - doping no poço quântico
In this work, we have studied the transport and optical properties of GaAs = AlGaAs resonant tunneling diodes with Si delta-doping at the center of the quantum well. We have studied magneto-transport and polarized resolved photoluminescence from GaAs quantum well and contact layers as a function of applied voltage and magnetic _eld parallel to the tunnel cur
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 11/03/2011
-
3. Polarização de spin em heteroestruturas semicondutoras contendo pontos quânticos de InAs
In this work, we have studied spin polarization of carriers in a resonant tunneling diode GaAs/AlGaAs with InAs quantum dots in the center of the quantum well. We have observed that the photoluminescence of quantum dots depends on applied voltage and light intensity. Our results were explained by the capture of minority carriers (holes) to quantum dot energy
Publicado em: 2010
-
4. Prorpiedades de transportes em fios e poÃos quÃnticos. / Transport Properties of Quantum Wells and Quantum Wires
Materiais semicondutores sÃo os principais responsÃveis pelo grande crescimento da indÃstria eletrÃnica e pelo surgimento de novas tecnologias. A criaÃÃo de heteroestruturas possibilitou um grande impulso à fÃsica do estado sÃlido. Atualmente, o estudo de semicondutores està concentrado em sistemas de dimensionalidade reduzida, como os poÃos, fios
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 21/07/2009
-
5. Magneto-tunelamento ressonante em super-redes de GaAs/AsGaAs
In this thesis we present three works in weakly coupled semiconductor superlattices of GaAs/AlGaAs. In the first work we present an investigation of the electric field domain configuration in the sequential tunneling regime in weakly coupled superlattices in the presence of a magnetic field applied parallel to the quantum well layers. We show that, for an ap
Publicado em: 2008
-
6. Magnetic multilayers in Ga1-xMn xAs/GaAs struc
Mn in GaAs substitutes Ga as a p dopant and introduces a localized magnetic moment of 5
/2. Ga1–xMn xAs (for x » 0.04) has been proved to be an extremely interesting material, for its intrincated transport and magnetic properties. In the first part of this work a s
Brazilian Journal of Physics. Publicado em: 2002-06
-
7. Efeitos da desordem em sistemas de baixa dimensionalidade
In this work we analyse the electronic properties of unidimensional and bidimensional disordered systems. The disorder can be correlated. The disorder can be correlated. These correlations occur when certain bounds between atoms are not allowed. Therefore, the starting point of our model is the so called repulsive binary alloy. We study the transmission prob
Publicado em: 1998
-
8. Resonant tunneling through donor impurities in double-barrier structures. / Tunelamento ressonante através de impurezas doadoras em estruturas de dupla barreira.
We have investigated resonant tunneling in GaAs/(AlGa)As double barrier structures which have been fabricated into square mesoscopic and macroscopic size mesas (∼ 10μm × 10μm) A δ layer with different concentrations of Silicon donors was incorporated at the centre of the quantum well. The I(V) characteristics show some features below the
Publicado em: 1994
-
9. Propriedades eletrônicas de um poço duplo assimétrico com dopagem delta. / Electronic properties of a double asymmetric quantum well with delta doping.
Calculamos a estrutura eletrônica do sistema formado por dois poços quânticos assimétricos (Al0.3Ga0.7As/GaAs) com dopagem delta (Si) no centro de cada poço. Resolvemos a equação de Schrödinger usando a teoria do funcional densidade na aproximação de densidade local. Obtemos o potencial efetivo, os níveis de energia, a ocupação das sub-bandas e
Publicado em: 1994
-
10. Study of incorporations of donor impurities in III-V semiconductor structures grown by molecular beam epitaxy. / Estudo de incorporações de impurezas doadoras em estruturas semicondutoras III-V crescidas por epitaxia por feixes moleculares.
III-V semiconductor samples were grown using the Molecular beam epitaxy technique, the electrical properties of the GaAs structures planar doped with silicon were investigated as well as the Silicon saturation and diffusion in these samles. The optcal and electrical properties of structures planar doped with Selenium were analyzed using the Capacitance Volta
Publicado em: 1993