Semiconductor Detectors
Mostrando 1-12 de 18 artigos, teses e dissertações.
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1. Study and characterization of indium oxynitride photoconductors
Multifunctional materials are a new class of thin films and coatings. These materials show interesting characteristics for application in many scientific areas, in special electronic and photonic technologies. These characteristics include sensitivity for thermal, light, mechanical, chemical and other influences, high resistivity, high electrical isolation a
Mat. Res.. Publicado em: 03/12/2013
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2. Desenvolvimento do cristal semicondutor de iodeto de mercúrio para aplicação como detector de radiação / Development of the mercury iodide semiconductor crystal for application as a radiation detector
In this work, the establishment of a technique for HgI growth and preparation of crystals, for use as room temperature radiation semiconductor detectors is described. Three methods of crystal growth were studied while developing this work: (1) Physical Vapor Transport (PVT); (2) Saturated Solution of HgI2, using two different solvents; (a) dimethyl sulfoxide
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 11/07/2011
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3. Desenvolvimento de um código computacional aberto de análise quantitativa para determinação de radionuclídeos por espectrometria gama com detectores semicondutores / Development of an open source software of quantitative analysis for radionuclide determination by gamma-ray spectrometry using semiconductor detectors
A quantificação da atividade de radionuclídeos emissores de raios gama em amostras medidas por espectrometria gama com detectores HPGe depende da análise dos fotopicos presentes no espectro, especialmente da determinação exata das suas áreas líquidas. Tal análise é geralmente realizada com o auxílio de ferramentas de software proprietário. Este t
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 26/05/2010
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4. Avaliação dosimétrica de detectores semicondutores para aplicação na dosimetria e microdosimetria em reatores nucleares e instalações de radiocirugia / Dosimetric evaluation of semiconductor detectors for application in neutron dosimetry and microdosimetry in nuclear reactor and radiosurgical facilities
Este trabalho tem como objetivo a avaliação dosimétrica de componentes semicondutores (detectores Barreira de Superfície e fotodiodos PIN) para aplicação em medições de dose equivalente em campos de baixo fluxo de nêutrons (rápidos e térmicos), utilizando uma fonte de AmBe de alto fluxo, a instalação de Neutrongrafia do reator IEA-R1 (fluxos té
Publicado em: 2010
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5. Fabricação e caracterização de sensor de pixel ativo com tecnologia NMOS de porta metalica / Fabrication and characterization of active pixel sensors using metal gate NMOS technology
Active Pixel Sensors (APS) based on a simple nMOS technology with high aspect ratio may present good sensitivity to photodetection and offer a low cost option for image sensing circuits. This work presents the layout, fabrication and characterization of photodiodes, transistors and APSs built at the Center for Semiconductor Components (CCS). All the process
Publicado em: 2009
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6. X-ray beam qualities for dental radiology purposes / PadronizaÃÃo de qualidade de feixes de raios-X para uso em radiologia odontolÃgica
In order to establish characteristics or properties of equipment for diagnostic radiology, e.g. ion chambers and semiconductor detectors, calibration laboratories offer a set of well-defined radiation conditions, called X-ray qualities, which can be used for many Physics studies and medical purposes. These X-ray qualities can be determined in terms of: (a) X
Publicado em: 2009
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7. X-ray beam qualities for dental radiology purposes / PadronizaÃÃo de qualidade de feixes de raios-X para uso em radiologia odontolÃgica
In order to establish characteristics or properties of equipment for diagnostic radiology, e.g. ion chambers and semiconductor detectors, calibration laboratories offer a set of well-defined radiation conditions, called X-ray qualities, which can be used for many Physics studies and medical purposes. These X-ray qualities can be determined in terms of: (a) X
Publicado em: 2009
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8. AvaliaÃÃo dos parÃmetros dosimÃtricos em feixes de FÃtons de Radioterapia usando fototransistor SMT
One of the biggest challenges in radiotherapy dosimetry is to certify that the prescribed dose is given to the patient. For this, it is necessary to use small detectors to evaluate the beam parameters. Current dosimetry is realized with detectors that highlight problems: high cost, difficulty in handling, absence of real time readout, complex and delayed obt
Publicado em: 2008
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9. Caracterização do campo de nêutrons na instalação para estudo em BNCT no Reator IEA-R1 / NEUTRON FIELD CHARACTERIZATION IN THE INSTALLATION FOR BNCT STUDY IN THE IEA R1 REACTOR.
This work aims to characterize the mixed neutron and gamma field, in the sample irradiation position, in a research installation for Boron Neutron Capture Therapy (BNCT), in the IPEN IEA-R1 reactor. The BNCT technique has been studied as a safe and selective option in the treatment of resistant cancerigenous tumors or considered non-curable by the convention
Publicado em: 2008
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10. Filmes finos de iodeto de chumbo como detector de raios-X para imagens médicas / Lead Iodide Thin Films as X-ray detectors for Medical Imaging
In the last few years, great interest has been focused to high atomic number and wide band gap semiconductor materials for applications in room temperature ionizing radiation detection using the direct detection method. Some materials such as PbI2, HgI2, TlBr, CdTe and CdZnTe are good photoconductors and can be used at room temperature. As a good candidate,
Publicado em: 2007
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11. Semiconductor characteristics of Nd doped PbO-Bi2O3-Ga2O3 films
In this work optical and semiconductor characteristics of gallium oxide based thin films are studied. This material has important electro-optic applications and offers possibilities for semiconductor applications in heavy metal oxide semiconductor technology. In this study thin films of PbO-Bi2O3-Ga2O3 were deposited by reactive sputtering. Two targets with
Brazilian Journal of Physics. Publicado em: 2006-06
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12. Stoichiometry, surface and structural characterization of lead iodide thin films
In this work we present the structural properties and stoichiometry analysis of thin films of lead iodide (PbI2). This material is a very promising semiconductor material for the development of X-ray detectors in digital medical imaging. An alternative deposition method called Spray Pyrolysis was used. We discuss the main advantages and limitations of the de
Brazilian Journal of Physics. Publicado em: 2006-06