Semiconductor Doped
Mostrando 1-12 de 41 artigos, teses e dissertações.
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1. COMPARATIVE STUDY OF TiO2 AND ZnO APPLICATION IN HYBRID SOLAR CELLS USING COPOLYMER P3OT/P3MT
Hybrid inorganic-organic solar cells are an attractive alternative energy source because of their low-cost production and ability to make use of a large amount of solar radiation available. This work aims to evaluate different solar cells composed of TiO2 and ZnO with P3OT/P3MT copolymer. Layers of semiconductor oxides were deposited on transparent fluorine-
Quím. Nova. Publicado em: 02/05/2019
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2. Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical Resistivity
The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped semiconductor-superconductor was revisited by in situ electrical resistivity measurements. SrTiO3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity as a function of time were measured at different temperature
Mat. Res.. Publicado em: 03/05/2018
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3. Electrocatalytic Oxidation Removal of Phenol from Aqueous Solution with Metal Oxides Doped Carbon Aerogel
Metal oxides (manganese oxide, MnO, manganese dioxide, MnO2, copper oxide, CuO, zinc oxide, ZnO and nickel oxide, NiO) doped carbon aerogel (CA) were prepared and used as catalysts in heterogeneous oxidation of phenol from aqueous solution in a three-dimensional (3D) electrode reactor. Textural characterization of metal oxides doped CA showed that the metal
J. Braz. Chem. Soc.. Publicado em: 2018-04
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4. Modificación de las propiedades estructurales, eléctricas y magnéticas del BiFeO3 por la incorporación de Ba y Nb
Bismuth ferrite (BFO) and Ba-Nb-substituted BFO with compositions Bi1-xBaxFeO3 (x= 0, 0.10, 0.15 y 0.20), BiFe1-yNbyO3 (y= 0, 0.03, 0.06 y 0.09) y Bi1-xBaxFe1-yNbyO3 (x= 0.10 (y= 0, 0.03, 0.06 y 0.09) powders were synthesized using the citrate-gel method. Infrared spectroscopy indicated shifting of Bi/Ba-O and Fe/Nb-O bond vibrations and a structural transit
Quím. Nova. Publicado em: 2017-02
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5. Electrical and Optical Transport Characterizations of Electron Beam Evaporated V Doped In2O3 Thin Films
Vanadium (5 at. %) doped Indium Oxide (V: In2O3) thin films with different thicknesses (50 nm, 100 nm and 150 nm) were prepared onto glass substrate by electron beam evaporation technique in a vacuum of about 4×10-3 Pa. X-ray diffraction (XRD) pattern revealed that the prepared films of thickness 50 nm are amorphous in nature. Temperature dependence of elec
Mat. Res.. Publicado em: 08/12/2016
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6. Ba-DOPED ZnO MATERIALS: A DFT SIMULATION TO INVESTIGATE THE DOPING EFFECT ON FERROELECTRICITY
ZnO is a semiconductor material largely employed in the development of several electronic and optical devices due to its unique electronic, optical, piezo-, ferroelectric and structural properties. This study evaluates the properties of Ba-doped wurtzite-ZnO using quantum mechanical simulations based on the Density Functional Theory (DFT) allied to hybrid fu
Quím. Nova. Publicado em: 2016-04
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7. Analysis of electronic structure of boron nitride nanotubes with different positions of intrinsic impurities
The pristine boron nitride nanotubes have a large direct band gap around 5 eV. This band gap can be engineered by doping. We investigate electronic structure of the doped hexagonal boron nitride (5,5) nanotubes using the linearized augmented cylindrical wave method. In particular, this work focuses on systematical study of the band gap and the density of sta
J. Microw. Optoelectron. Electromagn. Appl.. Publicado em: 2014-12
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8. Photo-Induced conductivity of heterojunction GaAs/Rare-Earth doped SnO2
Rare-earth doped (Eu3+ or Ce3+) thin layers of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with gallium arsenide (GaAs) films, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, because it may combine the emission from the rare-earth-doped transpa
Mat. Res.. Publicado em: 23/04/2013
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9. Estudo das propriedades elétricas de células eletroquímicas emissoras de luz de derivados de polifluoreno / Electric properties study of polymer light-emitting electrochemical cells based on polyfluorene derivatives
Polymer light emitting electrochemical cells, PLECs, are organic electronic devices that have attracted commercial interest because they operate at low voltage and exhibit high performance without the need of specific electrodes such as indium tin oxide (ITO), calcium and others. This feature provides low cost of fabrication and exible devices. The charge in
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 30/11/2011
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10. NANOCOMPÓSITOS BASEADOS EM QUANTUM DOTS DE CdS E CdS:Cu SUPORTADOS EM MERCAPTOPROPILSÍLICA:síntese, caracterização e aplicação em fotocatálise. / NANOCOMPOSITES BASED ON CdS AND CdS:Cu QUANTUM DOTS SUPPORTED ON MERCAPTOPROPYL-SILICA: synthesis, characterization and application in photocatalysis.
Textile dyes and other commercial dyestuffs have become a focus of environmental remediation efforts in the last few years. Considerable attention has been expended recently on the photocatalytic oxidative degradation of colored contaminants in waste water over semiconductor surfaces. In this work, we evaluated the photocatalytic activities of nanocomposites
Publicado em: 2011
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11. Vidros de germanato com nanopartículas metálicas e semicondutoras dopados com terras-raras para aplicações em fotônica. / Germanate glasses containing metalic an semiconductor nanoparticles dopes with rare-earth ions for photonic aplicattions.
This work presents a spectroscopic study about Eu3+, Nd3+ and Er3+ rare-earth doped germanate glasses containing metallic and semiconductor nanoparticles (NPs) aiming the development of new materials for photonic applications. These glasses have a large transmission window (400-4500 nm), high refractive index (~ 1.9), low phonon energy (700 cm-1), high mecha
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 01/09/2010
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12. The role of nonequilibrium thermo-mechanical statistics in modern technologies and industrial processes: an overview
The nowadays notable development of all the modern technology, fundamental for the progress and well being of world society, imposes a great deal of stress in the realm of basic Physics, more precisely on Thermo-Statistics. We do face situations in electronics and optoelectronics involving physical-chemical systems far-removed-from equilibrium, where ultrafa
Brazilian Journal of Physics. Publicado em: 2010-03