Semiconductor Hall Effect
Mostrando 1-10 de 10 artigos, teses e dissertações.
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1. Study and characterization of indium oxynitride photoconductors
Multifunctional materials are a new class of thin films and coatings. These materials show interesting characteristics for application in many scientific areas, in special electronic and photonic technologies. These characteristics include sensitivity for thermal, light, mechanical, chemical and other influences, high resistivity, high electrical isolation a
Mat. Res.. Publicado em: 03/12/2013
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2. The inductive coupling with On-Chip coils / O acoplamento indutivo com bobinas On-Chip
The quantum Hall effect (QHE) remains the target of an immense research effort twenty six years after its discovery. In fact this phenomenon has been a source of fundamental questions. Among the open problems in the field is the spatial distribution of the electric current in the quantum Hall effect. This question has been in debate since its discovery. Some
Publicado em: 2007
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3. Estudo de interferência de elétrons em dispositivos mesoscópicos no limite Hall quântico
In this work we introduce the basic concepts required to understand how electronic interferometers work. The interferometers are semiconductor devices based in GaAs/AlGaAs heterojunctions where a high mobility two-dimensional electron gas is formed. The electron gas is confined in a small region of dimension comparable to its Fermi wavelength. In a high magn
Publicado em: 2006
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4. MBE growth and characterization of films SnTe layers and SnTe/Sn1-x EuxTe heterostructures on BaF2 / Crescimento por MBE e caracterização de filmes SnTe e heteroestruturas de SnTe/Sn1-x EuxTe sobre BaF2
This work presents a systematic investigation of structural and electrical properties of SnTe epitaxial films grown on BaF2 substrates, as well as a study of structural properties of Sn1-xEuxTe (0
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 28/02/2005
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5. MBE growth and characterization of films SnTe layers and SnTe/Sn1-x EuxTe heterostructures on BaF2 / Crescimento por MBE e caracterização de filmes SnTe e heteroestruturas de SnTe/Sn1-x EuxTe sobre BaF2
Este trabalho tem por objetivo a investigação sistemática das propriedades estruturais e elétricas de filmes epitaxiais de SnTe crescidos sobre substratos de BaF2 (111), bem como o estudo das propriedades estruturais de filmes de Sn1-xEuxTe (0<xEu=0,12) crescidos sobre camadas intermediárias de SnTe pré-depositadas sobre substratos de BaF2 (111). As
Publicado em: 2005
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6. Magnetotransport and Hall ferromagnetism in magnetic semiconductor heterostructures / Magneto-transporte e ferromagnetismo Hall em heteroestruturas semicondutoras magnéticas
Digital magnetic heterostructures (DMHs) are semiconductor structures with magnetic impurities (Mn) restricted to some planar arrangements (monolayers) regularly spaced. In the presence of an external magnetic field, the sp-d exchange interaction between the localized magnetic moments and the itinerant carriers is responsible for a giant spin splitting, of t
Publicado em: 2004
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7. Contribuição para a sintese de diamante com dopagens de boro, nitrogenio ou enxofre / Study of diamond doping with boron, sulphur and nitrogen
We studied the diamond doping processes with introduction of doping impurities during the diamond growth in the chemical vapor deposition (CVD) technique, using a hot-filament reactor. Our research focused the use of boron, nitrogen or sulphur atoms in order to obtain diamond films with semiconductor properties of electronic (n-type) or hole (p-type) current
Publicado em: 2004
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8. Magneto-transporte em sistemas semicondutores com gas de eletrons bidimensional
The basic purpose of this work has been the implementation of magnetic-transport technics on semiconductor heterostructures that present two-dimensional electron gas (2-DEG), particularly, the Effect Shubnikov-de Haas (SdH) and the Quantum Hall Effect (QHE). This purpose, was accomplished through the recuperation of a superconductor magnetic coil (cryostat a
Publicado em: 1995
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9. Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O
Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65×1020 cm−3 as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the
American Institute of Physics.
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10. Composite fermions and bosons: An invitation to electron masquerade in Quantum Hall
The two-dimensional electron gas formed at the semiconductor heterointerface is a theater for many intriguing plays of physics. The fractional quantum Hall effect (FQHE), which occurs in strong magnetic fields and low temperatures, is the most fascinating of them. The concept of composite fermions and bosons not only is beautiful by itself but also has
The National Academy of Sciences.