Semiconductors Superlattices
Mostrando 1-4 de 4 artigos, teses e dissertações.
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1. Transporte eletrônico em super-redes semicondutoras: fingerprints de acoplamento, confinamento e assimetria em curvas de densidade de corrente / Electronic transport in semiconductor super-networks: fingerprints of engagement, containment and asymmetry in the current density curves
Neste trabalho fazemos um estudo sistemático do transporte eletrônico coerente em curvas de J(Vex) no regime balístico, de Super-Redes semicondutoras (SRs) baseadas em Heteroestruturas de GaAs/AlGaAs. Nosso objetivo principal é identicar os Fingerprints de connamento e acoplamento em curvas de corrente-voltagem, induzidos pela assimetria do sistema quand
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 05/06/2009
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2. Filtros acústicos em cristais fonônicos
In this work, we have studied the acoustic phonon wave propagation within the periodic and quasiperiodic superlattices of Fibonacci type. These structures are formed by phononic crystals, whose periodicity allows the raise of regions known as stop bands, which prevent the phonon propagation throughout the structure for specific frequency values. This p
Publicado em: 2009
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3. Multicamadas magnéticas de telureto de európio e semicondutores iv-vi crescidas por epitaxia de feixe molecular / Magnetic multilayers of europium telluride and IV-VI semiconductors grown by molecular beam epitaxy
In this work, thin EuTe films and EuTe/PbTe(SnTe) superlattices were grown, and their structural and magnetic properties were characterized. The molecular beam epitaxial growth parameters of the samples were optimized, particularly those of the EuTe/SnTe SLs. To this goal, the growth modes of EuTe on SnTe and vice versa were investigated, and the influence o
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 07/10/2008
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4. Photoluminescence properties of Te doped AlGaAsSb alloys
A detailed study of the photoluminescence properties in undoped and Te-doped AlGaAsSb alloys lattice matched to InP is presented. Photoluminescent temperature and excitation intensity dependences are employed to discuss the origin of the dominant transition and the influence of the presence of Al and Te on the fluctuation of the electrostatic potential in th
Brazilian Journal of Physics. Publicado em: 2005-12