Silicon Detector
Mostrando 1-12 de 13 artigos, teses e dissertações.
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1. Poly (Methyl Methacrylate)-SiC Nanocomposites Prepared Through in Situ Polymerization
In this study, polymeric nanocomposites based on poly(methyl methacrylate) (PMMA) and silicon carbide (SiC) nanoparticles were prepared by radical mass polymerization in the presence of filler. Nanoparticles of SiC with and without surface treatment with organosilane were obtained .The nanocomposites were characterized by X-ray fluorescence (XRF), infrared s
Mat. Res.. Publicado em: 03/09/2018
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2. Mechanical Loss Angle Measurement for Stressed thin Film Using Cantilever Ring-Down Method
Mechanical loss of the coating materials, and hence thermal noise from the mirror coatings, is a limiting factor for the sensitivity of the laser interferometer gravitational waves detector at its most sensitive frequency range. Mechanical loss of the thin films are often measured using the cantilever ring-down method. But when the thin film is under stress,
Mat. Res.. Publicado em: 28/05/2018
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3. Caracterização de um sistema de fluorescência de raios X por dispersão em energia para análise quantitativa de ligas metálicas / Characterization of a system for X-ray fluorescence energy dispersion for quantitative analysis of metal aeloys
Neste trabalho são apresentados os procedimentos de caracterização de um sistema comercial portátil de Fluorescência de Raios X por dispersão em energia, o ARTAX 200, bem com seu processo de calibração. O sistema é composto por um tubo de Raios X, com anodo de Molibdênio e um detector XFlash (Silicon Drift Detector) refrigerado por Efeito Peltier.
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 27/09/2012
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4. Desenvolvimento de dispositivos bolométricos para detecção de radiação infravermelha distante = : Development of bolometric devices for far-infrared radiation detection / Development of bolometric devices for far-infrared radiation detection
This work has as a main goal the fabrication and characterization of thermal sensors, described as bolometrics, which are dedicated to detection of far infrared radiation. These sensors are fabricated using microfabrication techniques and the thin films are selectives to wet etching. These mechanical microstructures are formed on silicon wafers using a surfa
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 11/07/2012
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5. A high-rate fastbus silicon strip readout system
This paper describes a synchronous silicon S ~rePado ut system capable of zero deadtime readout at average trigger rates in excess of 1 MHz. The system is implemented in FASTBUS, uses pipelining techniques, and includes p6nt-Wpoint fiberoptic data links to transmit detector digital data. Semi-custom ASIC chips are used to amplify, discriminate, and logically
Publicado em: 2011
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6. Desenvolvimento de transdutores paramétricos de alta sensibilidade para o detector de ondas gravitacionais mario schenberg
- The main purpose of this work was to build a set of parametric transducers of reentrant cavity type with high sensitivity and pumped at to be used in the gravitational wave detector Mario Schenberg. These transducers will monitor the mechanical vibrations of the -diameter spherical antenna in the frequency range. Niobium with high Tantalum impurities and w
Publicado em: 2009
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7. Characterization of cadmium and zinc telluride (CZT) and pin type silicon (Si-Pin) photodiode detectors for x-ray spectrometry / Characterization of cadmium and zinc telluride (CZT) and pin type silicon (Si-Pin) photodiode detectors for x-ray spectrometry / CaracterizaÃÃo dos detectores de telureto de cÃdmio e zinco (CZT) e fotodiodo de silÃcio tipo pin (Si-PIN) para a espectrometria de raios-x / CaracterizaÃÃo dos detectores de telureto de cÃdmio e zinco (CZT) e fotodiodo de silÃcio tipo pin (Si-PIN) para a espectrometria de raios-x
A detailed understanding of X-ray spectrum is essential for analyzing equipment that emits this kind of radiation in radiodiagnostic facilities. Information on the various parameters that are contained in this spectrum is important for quality control of X-ray equipment. Spectrometry of X-ray beams uses very often GeHP detectors, that have good detection eff
Publicado em: 2008
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8. Análise do potencial de calibração da força óptica através de dispositivos de microscopia de força atômica / Analysis of the calibration potential of optical force through atomic force microscopy devices
O microscópio de força atômica é uma ferramenta que possibilita a medida de forças precisamente localizadas com resoluções no tempo, espaço e força jamais vistas. No coração deste instrumento está um sensor a base de uma viga (cantilever) que é responsável pelas características fundamentais do AFM. O objetivo desta pesquisa foi usar a deflexã
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 19/12/2005
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9. "Factors affecting the energy resolution in alpha particle spectrometry with silicon diodes" / "Fatores que influenciam a resolução em energia na espectrometria de partículas alfa com diodos de Si"
Neste trabalho são apresentados os estudos das condições de resposta de um diodo de Si, com estrutura de múltiplos anéis de guarda, na detecção e espectrometria de partículas alfa. Este diodo foi fabricado por meio do processo de implantação iônica (Al/p+/n/n+/Al) em um substrato de Si do tipo n com resistividade de 3 kohmcm, 300 mícrons de esp
Publicado em: 2005
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10. Manufactured silicon diode used as an internal conversion electrons detector
In this work we have studied the direct detection and spectrometric capabilities for internal conversion electrons of an ion-implanted diode, developed in the framework of R&D programs at CERN, envisaging its use in an electron-gamma coincidence system for nuclear parameters measurements. The best energy resolution obtained until now, 12.6 keV (FWHM) for the
Brazilian Journal of Physics. Publicado em: 2004-09
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11. Electrical characterization of PbTe p-n junctions for applicarion in infrared detectors. / Caracterização elétrica de junções p-n de PbTe para aplicação em detectores de infravermelho.
This work reports on the electrical characterization of PbTe p-n junctions for application in photovoltaic detectors in the medium infrared range. For this purpose, a series of p-n junctions, where the hole concentration p was kept at 1017 cm-3 and the electron concentration n varied between 1017 and 1019 cm-3, was successfully grown by molecular beam epitax
Publicado em: 2004
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12. Single-nucleotide polymorphism genotyping on optical thin-film biosensor chips
Single-nucleotide polymorphisms (SNPs) constitute the bulk of human genetic variation and provide excellent markers to identify genetic factors contributing to complex disease susceptibility. A rapid, sensitive, and inexpensive assay is important for large-scale SNP scoring. Here we report the development of a multiplex SNP detection system using silicon chi
National Academy of Sciences.