Spin Valves
Mostrando 1-5 de 5 artigos, teses e dissertações.
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1. Comparison of computed amplitudes of magnetoresistance in spin-valve structures with wafer probe measurements
A code has been developed based on the semi-classical theory of giant magnetoresistance of Camley and Barnas [l]. It computes the sheet conductance and magnetoresistance of spin-valve structures. The input parameters are phenomenological transport parameters (mean-free paths and reflection/transmission coefficients at interfaces). These parameters are fairly
Publicado em: 2011
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2. Modelo de Preisach e análise FORC aplicados a filmes com exchange-bias / Preisach model and Forc analysis applied to exchang biased films
In this work, thin films of Si[100]/buffer/NiFe/FeMn/Ta (buffer = Cu; Ta) and spin valves of Si[100]/Cu/NiFe/Cu/NiFe/FeMn/Ta were produced via sputtering and their magnetic behavior were studied by First Order Reversal Curves (FORCs) analysis. A Preisach Model with Exchange-Bias was developed and applied in order to simulate the hysteresis and the first orde
Publicado em: 2008
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3. CRESCIMENTO, ESTRUTURA E POLARIZAÇÃO DE TROCA EM BICAMADAS FERROMAGNETO / ANTIFERROMAGNETO PREPARADAS POR DEPOSIÇÃO EM CONDIÇÕES DE EPITAXIA POR FEIXE MOLECULAR: Fe / EuTe(111), Fe / Ni50Mn50(001) e Ni1-xFex / Fe50Mn50
Magnetic interaction at interfaces between different layered magnetic materials is an important current topic in physics and materials science, particularly when combining ferromagnetic metals and semiconductors. The exchange bias effect associated with the exchange coupling between antiferromagnetic (AFM) and ferromagnetic (FM) systems, has been extensively
Publicado em: 2007
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4. RessonÃncia ferromagnÃtica em vÃlvulas de spin e relaxaÃÃo em filmes de permalloy / RessonÃncia ferromagnÃtica em vÃlvulas de spin e relaxaÃÃo em filmes de permalloy
In this dissertation it has been investigated the dynamic properties of spin-valves and the relaxation mechanism in thin Permalloy films. All measurements reported here were obtained at room temperature, using a homemade ferromagnetic resonance (FMR) setup, working in the X-band regime of frequency. The spin-valve structures Si(001)/NiO(900Ã)/Py(100Ã)/Cu(t
Publicado em: 2003
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5. Magnetic multilayers in Ga1-xMn xAs/GaAs struc
Mn in GaAs substitutes Ga as a p dopant and introduces a localized magnetic moment of 5
/2. Ga1–xMn xAs (for x » 0.04) has been proved to be an extremely interesting material, for its intrincated transport and magnetic properties. In the first part of this work a s
Brazilian Journal of Physics. Publicado em: 2002-06