Strain Soi
Mostrando 1-8 de 8 artigos, teses e dissertações.
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1. Influência do Crescimento Epitaxial Seletivo (SEG) em transistores SOI de porta tripla de canal N tensionado. / Influence of Selective Epitaxial Growth (SEG) in strained SOI triple gate N transistors.
Este trabalho apresenta um estudo da influência do crescimento epitaxial seletivo (SEG) em dispositivos tensionados mecanicamente (strain) em transistores SOI MuGFET de porta tripla. Com a evolução da tecnologia de integração de transistores, alguns efeitos parasitários são eliminados ou diminuídos, porém outros novos surgem. A tecnologia SOI MuGFET
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 27/05/2011
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2. Operação analógica de transistores de múltiplas portas em função da temperatura. / Analog operation of multiple gate transistors as a function of the temperature.
In this work it is presented an analysis of the analog operation of multiple gate transistors, evaluating the Early Voltage, the open-loop voltage gain, the transconductance over the drain current ratio (gm/IDS), the drain conductance and, especially, the harmonic distortion exhibited by these devices. Along the work, FinFETs, Gate-All-Around (GAA) devices w
Publicado em: 2010
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3. Study of the source and drain series resistance in SOI FinFETs triple gate transistors and with strained channel. / Estudo da resistência série de fonte e dreno de transistores SOI FinFETs de porta tripla e com canal tensionado.
This work presents the study of the source and drain series resistance behavior in standard and strained SOI FinFETs triple gate transistors. In SOI FinFETs transistors there is an increase of the source and drain series resistance due to the narrow of these regions, being this parameter a key limiting factor to the next generations. The use of strained tran
Publicado em: 2009
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4. Modelagem, simulação e fabricação de circuitos analógicos com transistores SOI convencionais e de canal gradual operando em temperaturas criogênicas. / Modeling, simulation and fabrication of analog circuits with standard and graded-channel SOI transistors operating at cryogenic temperatures.
Neste trabalho apresentamos a análise do comportamento analógico de transistores MOS implementados em tecnologia Silício sobre Isolante (SOI), de canal gradual (GC) e com tensão mecânica aplicada ao canal, operando em baixas temperaturas (de 380 K a 90 K), em comparação com dispositivos SOI convencionais. Este estudo foi realizado utilizando-se medida
Publicado em: 2008
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5. Análises tensão-deformação de estruturas de solo grampeado. / Stress-Strain analysis of soil nailed structures.
The limit equilibrium methods that are frequently used for design of soi nailing structures do not provide information about the structures stress and strain. However, the techniques success depends on the displacements that mobilize the nails strength. Therefore it is desirable to predict the structures displacement, during and after the excavation; the for
Publicado em: 2008
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6. Isolation of gene fusions (soi::lacZ) inducible by oxidative stress in Escherichia coli.
Mu dX phage was used to isolate three gene fusions to the lacZ gene (soi::lacZ; soi for superoxide radical inducible) that were induced by treatment with superoxide radical anion generators such as paraquat and plumbagin. The induction of beta-galactosidase in these fusion strains with the superoxide radical generating agents required aerobic metabolism. Hyp
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7. Isolation and characterization of Escherichia coli strains containing new gene fusions (soi::lacZ) inducible by superoxide radicals.
Gene fusions in Escherichia coli that showed increased beta-galactosidase expression in response to treatment with a superoxide radical (O2-) generator, methyl viologen (MV), were obtained. These fusions were constructed by using a Mud(Ap lac) phage to insert the lactose structural genes randomly into the E. coli chromosome. Ampicillin-resistant colonies wer
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8. Escherichia coli proteins inducible by oxidative stress mediated by the superoxide radical.
Two-dimensional gel analyses were made of proteins synthesized in Escherichia coli during various O2- -generating conditions. Nine proteins were constitutively synthesized over wild-type levels in superoxide dismutase (sodA sodB) double mutants. Addition of redox cycling agents such as paraquat and plumbagin at various concentrations induced up to 13 protein