Transistors Fets
Mostrando 1-9 de 9 artigos, teses e dissertações.
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1. Poly(Vinyl Alcohol) Gate Dielectric Treated With Anionic Surfactant in C60 Fullerene-Based n-Channel Organic Field Effect Transistors
We report on the preparation and performance enhancement of n-type low-voltage organic field effect transistors (FETs) based on cross-linked poly(vinyl alcohol) (cr-PVA) as gate dielectric and C60 fullerene as channel semiconductor. Transistors were prepared using bottom-gate top-contact geometry and exhibited field-effect mobility (µFET) of 0.18 cm2V-1s-1.
Mat. Res.. Publicado em: 19/09/2016
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2. Operação analógica de transistores de múltiplas portas em função da temperatura. / Analog operation of multiple gate transistors as a function of the temperature.
In this work it is presented an analysis of the analog operation of multiple gate transistors, evaluating the Early Voltage, the open-loop voltage gain, the transconductance over the drain current ratio (gm/IDS), the drain conductance and, especially, the harmonic distortion exhibited by these devices. Along the work, FinFETs, Gate-All-Around (GAA) devices w
Publicado em: 2010
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3. Study of the source and drain series resistance in SOI FinFETs triple gate transistors and with strained channel. / Estudo da resistência série de fonte e dreno de transistores SOI FinFETs de porta tripla e com canal tensionado.
This work presents the study of the source and drain series resistance behavior in standard and strained SOI FinFETs triple gate transistors. In SOI FinFETs transistors there is an increase of the source and drain series resistance due to the narrow of these regions, being this parameter a key limiting factor to the next generations. The use of strained tran
Publicado em: 2009
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4. Transistor de efeito de campo (FET) para detecção quimica e bioquimica utilizando dieletrico de porta constituido de camada empilhada SiNx/SiOxNy / Field effect transistors (FET) with dielectric gate made of a stacked layer SiNx/SiOxNy for chemical and biochemical detection
Esta dissertação consiste de duas etapas. Inicialmente são estudados filmes de nitreto de silício depositados por LPCVD, Low Pressure Chemical Vapor Deposition, utilizando-se diferentes relações de concentração de gases reagentes, [SiH2Cl2]/[NH3], e utilizando-se como substrato lâminas de silício tipo p, com e sem camada almofada de oxinitreto de s
Publicado em: 2009
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5. Estudo do efeito de elevação atípica da transcondutância na região linear de polarização em dispositivos SOI nMOSFETS ultra-submicrométricos. / Study of gate induced floating body effect in the linear bias region in deep submicrometer nMOSFETs devices.
This work presents the study of the Gate Induced Floating Body Effect (GIFBE) that occurs in the SOI MOSFET technology. This study has been performed based on experimental results and on numerical simulations, which were an essential auxiliary tool to obtain a physical insight of this effect. Besides the contribution on the physical explanation of this pheno
Publicado em: 2008
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6. Theoretical-experimental study of the drain current transient and generation lifetime in SOI MOSFETs technologies. / Estudo teórico-experimental do transitório da corrente de dreno e do tempo de vida de geração em tecnologias SOI MOSFETs.
This work presents a study of drain current switch-off transients and extraction methods of the generation lifetime in partially depleted SOI nMOSFET transistors of single gate, double gate and triple gate FinFETs. This study is accomplished through two-dimensional numerical simulations and compared with experimental data of devices fabricated in the IMEC (I
Publicado em: 2008
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7. Fabrication of ISFET-Microsensors based on Ag and Au Nanoelectrodes / Desenvolvimento de Microssensores do tipo ISFETs a base de Nanoeletrodos de Ag e Au
Conjuntos de transistores de efeito de campo sensíveis a íons (ISFETs) foram desenvolvidos no presente trabalho. Implementou-se durante a fabricação destes uma etapa adicional de anodização que possibilitou a formação de uma fina camada de alumina porosa sobre suas portas. Esta serviu como dielétrico e também molde para o crescimento de nanocristai
Publicado em: 2007
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8. ProduÃÃo de heterojunÃÃes de polianilina/silÃcio e nanofibras de polianilina para aplicaÃÃes em dispositivos hÃbridos
In this work we develop the methodology for the synthesis and fabrication of Polyaniline (PANI) â Silicon (Si) heterojunctions, with great potential for technological applications as sensors in different areas such as optics, ionizing radiation and gas detection. Besides, we were able to implement the electrospinnin technique with the goal of producing poly
Publicado em: 2006
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9. Projeto e implementação de amplificadores distribuidos para recepção de sinais de alta velocidade
This work presents the design and implementation of hybrid distributed amplifiers, intendedfor advanced microwave systems that work with high velocity digital signals. Initially, approximated expressions for the computation of power gain and noise figure of these amplifiers were developed. Such equations allow the investigation of the frequency behavior and
Publicado em: 1991