Tunneling Current
Mostrando 1-12 de 34 artigos, teses e dissertações.
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1. Water jet tunneling: a theoretical advanced rate evaluation
Abstract Tunnel Boring Machines play an important role in the underground infrastructure execution of modern cities. They weigh thousands of tons and measure hundreds of meters besides utilizing high powered energy in the excavation process. Although being well established, they are based on a last century design approach and they are not compatible anymore
REM, Int. Eng. J.. Publicado em: 2018-04
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2. Preparation and characterization of a homemade Josephson junction prepared from a thin film sintered in a domestic microwave oven
A homemade Josephson junction was successfully obtained using a superconductor thin film of the BSCCO system. The film was deposited on a lanthanum aluminate, produced from a commercial powder with a nominal composition Bi1.8Pb0.4Sr2CaCu2Ox, was thermally treated by a domestic microwave oven. The XRD analysis of the film indicated the coexistence of Bi-2212
Mat. Res.. Publicado em: 08/03/2016
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3. Estudo de transistores de tunelamento controlados por efeito de campo. / Study of tunnel field effect transistors.
This works presents the study of tunneling field effect transistors, namely TFETs. Analyses were performed based on theoretical explanations, numerical simulations and experimental data in order to show this technology suitability as an alternative for the continuous devices scaling. The basic idea of making use of band-to-band tunneling as the main current
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 26/03/2012
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4. Controle de Corrente de Spin em Pontos Quânticos na Presença de Tensões de Porta Moduladas no Tempo
Since Loss &DiVincenzo proposal to use confined electron spins in quantum dots (QDs) as a building block for qubits in solid state systems, spin-dependent transport in QDs has attracted a lot of attention. The interest for this system increased even further with the recent experimental developments to coherently control (initialization-manipulation-read out)
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 09/08/2011
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5. Magneto luminescência em diodos de tunelamento ressonante contendo pontos quânticos de InAs
In this work, we have studied the spin polarization of carriers in n-type resonant tunneling diodes (RTDs) of GaAs/AlGaAs which incorporates a single layer of InAs selfassembled quantum dots in the center of the GaAs quantum well (QW) grown on (3 1 1)B oriented GaAs substrates.We have performed electrical and optical measurements in the presence and absence
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 15/03/2011
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6. Propriedades magneto-óticas e de magneto-transporte de um diodo de tunelamento ressonante contendo Si δ - doping no poço quântico
In this work, we have studied the transport and optical properties of GaAs = AlGaAs resonant tunneling diodes with Si delta-doping at the center of the quantum well. We have studied magneto-transport and polarized resolved photoluminescence from GaAs quantum well and contact layers as a function of applied voltage and magnetic _eld parallel to the tunnel cur
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 11/03/2011
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7. PREPARAÇÃO, CARACTERIZAÇÃO E ESTUDOS ELETROQUÍMICOS DE ELETRODOS MODIFICADOS COM DIFERENTES MONOCAMADAS AUTOORGANIZADAS
In this work were studied investigated different types of modifiers for the formation of self-assembled monolayers on the gold surface. The monolayers used were formed by different structural arrangements, alkyl chains and functional groups. The thiols groups used were: 3-mercaptopropionic acid (MPA), thiolactic acid (TLA), cystamine (CYS) and 11-mercaptound
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 03/03/2011
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8. Analysis of electron direct tunneling current through very-thin gate oxides in MOS capacitors with the parallel-perpendicular kinetic energy components and anisotropic masses
An electron direct tunneling current model of n+- poly - Si/SiO2/p - Si(100) metal-oxide-semiconductor (MOS) capacitors has been developed by considering a parallel-perpendicular kinetic energy coupling, which is represented by the gate electron phase velocity, and anisotropic masses under a parabolic E-k dispersion relationship. The electron effective mass
Brazilian Journal of Physics. Publicado em: 2010-12
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9. Polarização de spin em heteroestruturas semicondutoras contendo pontos quânticos de InAs
In this work, we have studied spin polarization of carriers in a resonant tunneling diode GaAs/AlGaAs with InAs quantum dots in the center of the quantum well. We have observed that the photoluminescence of quantum dots depends on applied voltage and light intensity. Our results were explained by the capture of minority carriers (holes) to quantum dot energy
Publicado em: 2010
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10. Investigation of structural, electronic and magnetica properties of Ca2-xLaxFelrO6, Sr2-xLaxFelrO6 e TbMnO3 oxides / Investigação as propriedades estruturais, eletronicas e magneticas dos oxidos Ca2-xLaxFelrO6, Sr2-xLaxFelrO6 e TbMnO3
For many decades the transition metal oxides are subject of great scientific interest because of the wide variety of interesting physical properties and their potential technological applications. More recently, for example, oxides of transition metals with multiferroic properties have been considered as potential magneto-electronic devices. Many transition
Publicado em: 2010
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11. Magneto-tunelamento ressonante em super-redes de GaAs/AsGaAs
In this thesis we present three works in weakly coupled semiconductor superlattices of GaAs/AlGaAs. In the first work we present an investigation of the electric field domain configuration in the sequential tunneling regime in weakly coupled superlattices in the presence of a magnetic field applied parallel to the quantum well layers. We show that, for an ap
Publicado em: 2008
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12. Fabricação e caracterização de dispositivos poliméricos emissores de luz com camada ativa de poli(2-metóxi, 5-(2-etil-hexilóxi)-1,4-fenileno vinileno) (MEH-PPV) / Fabrication and characterization of polymer light-emitting diodes with active layer composed by poly(2-methoxy, 5-(2-etil-hexilhoxy)-1,4-phenilene vinilene) (MEH-PPV).
Polymer light emitting diodes (PLEDs) have been widely investigated as candidate materials for display fabrication. The main advantages exhibited by PLEDs are the low-cost processing and possibility of large-area display fabrication, in comparison to the conventional liquid crystal displays (LCDs). Although the engineering aspects concerning device fabricati
Publicado em: 2008